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Effect of Different High-K Dielectrics on the Pt Nanocrystal Formation Statistics (size, density and area coverage) for Flash Memory Application

Published online by Cambridge University Press:  01 March 2011

Abhishek Misra ,
Sunny Sadana ,
Satya Suresh ,
Meenakshi Bhaisare ,
Senthil Srinivasan ,
Mayur Waikar ,
Amit Gaur  and
Anil Kottantharayil
Abhishek Misra
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, 400076 Mumbai, India. E-mail: mabhishek@ee.iitb.ac.in
Sunny Sadana
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, 400076 Mumbai, India. E-mail: mabhishek@ee.iitb.ac.in
Satya Suresh
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, 400076 Mumbai, India. E-mail: mabhishek@ee.iitb.ac.in
Meenakshi Bhaisare
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, 400076 Mumbai, India. E-mail: mabhishek@ee.iitb.ac.in
Senthil Srinivasan
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, 400076 Mumbai, India. E-mail: mabhishek@ee.iitb.ac.in
Mayur Waikar
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, 400076 Mumbai, India. E-mail: mabhishek@ee.iitb.ac.in
Amit Gaur
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, 400076 Mumbai, India. E-mail: mabhishek@ee.iitb.ac.in
Anil Kottantharayil
Affiliation:
Department of Electrical Engineering, Indian Institute of Technology Bombay, 400076 Mumbai, India. E-mail: mabhishek@ee.iitb.ac.in
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Abstract

We here present, metal nanocrystal (NC) formation statistics (size, density, occupancy or area coverage) on different high dielectric constant (high-K) materials which may be used as tunnel dielectric or intermetal dielectric in flash memory devices. Four important high-K materials viz. SiO2, Al2O3, HfO2 and Si3N4 are chosen for this purpose and the nanocrystal formation statistics has been found to be strongly dependent on dielectric. Among all the four dielectrics, smallest size nanocrystals with largest density are obtained on Al2O3 dielectric while on HfO2 bigger size nanocrystals are formed. This difference in nanocrystal size and density on different dielectrics is attributed to the different surface properties of these materials.

Keywords

Ptnucleation & growthscanning electron microscopy (SEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1288: Symposium G – Novel Fabrication Methods for Electronic Devices , 2011 , mrsf10-1288-g11-48
Copyright
Copyright © Materials Research Society 2011

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References

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