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The Effect of Forming Gas Annealing on Pt/(Ba,Sr)TiO3/Pt Thin Film Capacitors for Future Dram Applications: Electrical Properties and Degradation Mechanisms

Published online by Cambridge University Press:  21 March 2011

J. D. Baniecki ,
C. Parks ,
R.B. Laibowitz ,
T. M. Shaw  and
J. Lian
J. D. Baniecki
Affiliation:
IBM Microelectronics, Semiconductor R&D Center, 1580 Route 52, Hopewell Junction, NY 12533
C. Parks
Affiliation:
IBM Microelectronics, Semiconductor R&D Center, 1580 Route 52, Hopewell Junction, NY 12533
R.B. Laibowitz
Affiliation:
IBM Research Div, Yorktown Heights, NY 10598
T. M. Shaw
Affiliation:
IBM Research Div, Yorktown Heights, NY 10598
J. Lian
Affiliation:
Infineon Technologies, 1580 Route 52, Hopewell Junction, NY 12533
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Abstract

We have used electrical characterization and secondary ion mass spectroscopy (SIMS) to investigate the influence of hydrogen or deuterium (H/D) on the degradation of the electrical properties of Pt/Ba0.7Sr0.3TiO3/Pt thin film capacitors after forming gas exposure. Deuterium SIMS depth profiling shows that high deuterium concentrations can be incorporated into Pt/BSTO/Pt capacitors after forming gas annealing. The increase in H/D concentration in the film is accompanied by an increase in the leakage and dielectric relaxation current density. Voltage offsets in the capacitance-applied voltage (C-VA) characteristics after forming gas exposure at lower temperatures (20 °C) and a suppression in the capacitance density near zero applied D.C. bias after forming gas exposure at higher temperatures, suggests that one effect of forming gas exposure to Pt/BSTO/Pt thin film capacitors is to introduce positive space charge into the BSTO film. Using an equivalent model for a ferroelectric thin film capacitor, which incorporates lower permittivity interfacial layers and a nonlinear electric field-electric displacement relationship for the film interior, the effects of a uniform distribution of positive space charge on the theoretical C-VA and current density applied voltage (J-VA) characteristics are investigated. It is shown the model can account for many of the observed changes that occur in the experimental C-VA and J-VA characteristics after forming gas exposure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC6.1.1
Copyright
Copyright © Materials Research Society 2001

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Footnotes

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Present address: Fujitsu Laboratories, Atsugi, Japan

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