Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-30T21:36:13.550Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Growth Conditions and Buffer Layers on the Metal-Insulator Transition in V2O3 Thin Films

Published online by Cambridge University Press:  15 February 2011

H. Schuler ,
G. Weissmann ,
C. Renner ,
S. Six ,
S. Klimm ,
F. Simmet  and
S. Horn
H. Schuler
Affiliation:
Lehrstuhl für Experimentalphysik II, Institut für Physik, Universität Augsburg, Memminger Strasse 6, D-86159 Augsburg, hom@physik.uni-augsburg.de
G. Weissmann
Affiliation:
Lehrstuhl für Experimentalphysik II, Institut für Physik, Universität Augsburg, Memminger Strasse 6, D-86159 Augsburg, hom@physik.uni-augsburg.de
C. Renner
Affiliation:
Lehrstuhl für Experimentalphysik II, Institut für Physik, Universität Augsburg, Memminger Strasse 6, D-86159 Augsburg, hom@physik.uni-augsburg.de
S. Six
Affiliation:
Lehrstuhl für Experimentalphysik II, Institut für Physik, Universität Augsburg, Memminger Strasse 6, D-86159 Augsburg, hom@physik.uni-augsburg.de
S. Klimm
Affiliation:
Lehrstuhl für Experimentalphysik II, Institut für Physik, Universität Augsburg, Memminger Strasse 6, D-86159 Augsburg, hom@physik.uni-augsburg.de
F. Simmet
Affiliation:
Lehrstuhl für Experimentalphysik II, Institut für Physik, Universität Augsburg, Memminger Strasse 6, D-86159 Augsburg, hom@physik.uni-augsburg.de
S. Horn
Affiliation:
Lehrstuhl für Experimentalphysik II, Institut für Physik, Universität Augsburg, Memminger Strasse 6, D-86159 Augsburg, hom@physik.uni-augsburg.de
Get access

Abstract

Thin films of V2O3 with thickness from 20 to 450 nm were deposited on (0001) oriented sapphire substrates by reactive e-beam evaporation. LEED, x-ray diffraction and AFM studies show highly oriented grains with a lateral size of 50 to 800 nm, dependent on substrate temperature and deposition rate. The films were characterized by optical and infrared transmission, electrical resistance and Hall effect measurements. Films grown directly on the Al2O3-substrate show a very broad metal-insulator (MI) transition as a function of temperature. The width of the transition decreases with increasing film thickness. The insertion of Cr2O3 buffer layers decreases the transition width by a further factor of three. The electronic properties of the films can be drastically influenced by the growth conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 61
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Thomas, G. A., Rapkine, D. H., Carter, S. A., Millis, A. J., Rosenbaum, T. F., Metcalf, P. and Honig, J. M., Phys.Rev.Let. 73, 1529 (1994)Google Scholar
2. Rana, R. S., Nolte, D. D. and Chudnovskii, F. A., Opt.Let. 17, 1385 (1992)Google Scholar
3. McWhan, D. B. and Remeika, J. P., Phys.Rev B, 2, 3734 (1970)Google Scholar
4. Carter, S. A., Yang, J., Rosenbaum, T. F., Spalek, J., Honig, J. M., Phys.Rev B, 43, 607 (1991)Google Scholar
5. Case, F. C., J.Vac.Sci.Technol. A 9 (3), 461 (1991); J.Vac.Sci.Technol. A 8 (3), 1395 (1990)Google Scholar