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Effect of Growth Conditions on Structural and Electrical Properties of Ga-doped ZnO Films Grown by Plasma-assisted MBE

Published online by Cambridge University Press:  31 January 2011

Vitaliy Avrutin ,
H.Y. Liu ,
Natalia Izyumskaya ,
Michael A. Reshchikov ,
Ümit Özgür ,
A.V. Kvit ,
Paul Voyles  and
Hadis Morkoç
Vitaliy Avrutin
Affiliation:
vavrutin@vcu.eduv.avrutin@mail.ru, Virginia Commonwealth University, Electrical and Computer Engineering, 601 West Main St., Richmond, Virginia, 23284, United States, 1 (804)827 7000 ext 357, 1 (804)828 4269
H.Y. Liu
Affiliation:
huiyongliuster@gmail.com, Virginia Commonwealth University, Electrical and Computer Engineering, Richmond, Virginia, United States
Natalia Izyumskaya
Affiliation:
nizioumskaia@vcu.edu, Virginia Commonwealth University, Electrical and Computer Engineering, Richmond, Virginia, United States
Michael A. Reshchikov
Affiliation:
mreshchi@vcu.edu, Virginia Commonwealth University, Physics, 701 W. Grace St., Richmond, Virginia, 23284, United States, 804-828-1613, 804-828-7073
Ümit Özgür
Affiliation:
uozgur@vcu.edu, Virginia Commonwealth University, Richmond, Virginia, United States
A.V. Kvit
Affiliation:
kvit@wisc.edu, University of Wisconsin-Madison, Materials Science and Engineering, Madison, Wisconsin, United States
Paul Voyles
Affiliation:
voyles@engr.wisc.edu, University of Wisconsin-Madison, Materials Science and Engineering, Madison, Wisconsin, United States
Hadis Morkoç
Affiliation:
hmorkoc@vcu.eduhmorkoc@vcu.edu, Virginia Commonwealth University, Electrical and Computer Engineering, 601 W Main St, Richmond, Virginia, 23284-3072, United States, 804 827 3765, 804 827 0006
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Abstract

ZnO has recently attracted a great deal of attention as a material for transparent contacts in light emitters and adsorbers. ZnO films heavily doped with Ga (carrier concentration in the range of 1020 - 1021 cm-3) were grown on a-plane sapphire substrates by RF plasma-assisted molecular beam epitaxy. Oxygen pressure during growth (i.e. metal (Zn+Ga)–to–oxygen ratio) was found to have a crucial effect on structural, electrical, and optical properties of the ZnO:Ga films. As-grown layers prepared under metal-rich conditions exhibited resistivities below 3×10-4 Ω-cm and an optical transparency exceeding 90% in the visible spectral range. In contrast, the films grown under the oxygen-rich conditions required thermal activation and showed inferior structural, electrical, and optical characteristics even after annealing.

Keywords

molecular beam epitaxy (MBE)II-VIelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H05-20
Copyright
Copyright © Materials Research Society 2010

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