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Effect of Low Temperature Annealing on High Field Magnetoresistance and Hall effect in (Ga, Mn)As Dilute Magnetic Semiconductors

Published online by Cambridge University Press:  01 February 2011

K. Ghosh ,
Mohammad Arif ,
T. Kehl ,
R. J. Patel ,
S. R. Mishra  and
J. G. Broerman
K. Ghosh
Affiliation:
Department of Physics, Astronomy & Materials Science, Southwest Missouri State University, Springfield, MO 65804, U.S.A.
Mohammad Arif
Affiliation:
Department of Physics, Astronomy & Materials Science, Southwest Missouri State University, Springfield, MO 65804, U.S.A.
T. Kehl
Affiliation:
Department of Physics, Astronomy & Materials Science, Southwest Missouri State University, Springfield, MO 65804, U.S.A.
R. J. Patel
Affiliation:
Department of Physics, Astronomy & Materials Science, Southwest Missouri State University, Springfield, MO 65804, U.S.A.
S. R. Mishra
Affiliation:
Department of Physics, the University of Memphis, Memphis, TN 38152, U.S.A.
J. G. Broerman
Affiliation:
Department of Physics, Astronomy & Materials Science, Southwest Missouri State University, Springfield, MO 65804, U.S.A.
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Abstract

In this paper we report the effect of low temperature annealing on the high field magnetotransport properties of epitaxial thin films of (Ga, Mn)As Dilute Magnetic Semiconductor (DMS) with low concentration (1.5 %) of Mn doping, which results in a ferromagnetic insulator. Annealing at an optimal temperature enhances the conductivity, carrier concentration, and ferromagnetic transition temperature. The field dependence of magnetoresistance is different below and above the ferromagnetic transition temperature. An attempt is made to analyze the data using a theoretical model proposed by Kaminski and Das Sarma [1].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.21
Copyright
Copyright © Materials Research Society 2005

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References

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