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The Effect of Low Temperature GaAs Nucleation on the Growth of GaN on Silicon (001) During MOVPE Process

Published online by Cambridge University Press:  10 February 2011

L. X. Zheng ,
J. W. Liang ,
H. Yang ,
J. B. Li ,
Y. T. Wang ,
D. P. Xu ,
X. F. Li ,
L. H. Duan  and
X. W. Hu
L. X. Zheng
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
J. W. Liang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
H. Yang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
J. B. Li
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Y. T. Wang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
D. P. Xu
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
X. F. Li
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
L. H. Duan
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
X. W. Hu
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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Abstract

High quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10–20nm GaAs nucleation layer grown by ALE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 69
Copyright
Copyright © Materials Research Society 1998

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