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Effect of Low-Level Boron Doping on Transport Properties of a-Si:H and a-SiGe:H Alloys

Published online by Cambridge University Press:  25 February 2011

Liyou Yang ,
A. Catalano ,
R. R. Arya ,
M. S. Bennett  and
I. Balberg
Liyou Yang
Affiliation:
Solarex Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
A. Catalano
Affiliation:
Solarex Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
R. R. Arya
Affiliation:
Solarex Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
M. S. Bennett
Affiliation:
Solarex Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
I. Balberg
Affiliation:
The Racah Institute of Physics, The Hebrew University, Jerusalem, Israel
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Abstract

Large simultaneous changes in ambipolar diffusion length and d.c. photoconductivity are observed with boron doping below 5ppm. We show that the observation can be explained successfully with a model for the doping effect, which is also consistent with earlier studies. The μτ products for both carriers as a function of doping are determined. The light intensity dependence of diffusion length and photoconductivity is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 563
Copyright
Copyright © Materials Research Society 1989

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References

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