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Effect of Phonon Confinement on Intersubband Lasing Lifetimes of Si/SiGe Quantum Well Structures

Published online by Cambridge University Press:  15 February 2011

L. Friedman  and
G. Sun
L. Friedman
Affiliation:
Rome Laboratory/EROC, Hanscom AFB, MA 01731
G. Sun
Affiliation:
University of Massachusetts Boston, Engineering Program, Boston MA 02125
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Abstract

The feasibility of population inversion is studied for the Si/SiGe system. Because of the absence of polar optical phonon scattering, the lifetime difference of the upper and lower lasing levels, to which the population inversion and laser gain are proportional, are an order of magnitude larger than in the III-Vs; nor does this show the large decrease to negative values (loss of population inversion) when the intersuband energy difference exceeds the optical phonon energy. We have investigated the effect of phonon confinement of the Ge-Ge and Si-Ge vibrations on the intersubband scattering rates and find a furthur enhancement of the the intersubband lifetimes as compared to those due to unconfined phonons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 455
Copyright
Copyright © Materials Research Society 1996

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References

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