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Effect of Pressure on Arsenic Diffusion in Germanium

Published online by Cambridge University Press:  22 February 2011

S. Mitha ,
S. D. Theiss ,
M. J. Aziz ,
D. Schiferl  and
D. B. Poker
S. Mitha
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
S. D. Theiss
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
M. J. Aziz
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
D. Schiferl
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545
D. B. Poker
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

We report preliminary results of a study of the activation volume for diffusion of arsenic in germanium. High-temperature high-pressure anneals were performed in a liquid argon pressure medium in a diamond anvil cell capable of reaching 5 GPa and 7500 C, which is externally heated for uniform and repeatable temperature profiles. The broadening of an ion-implanted arsenic profile was measured by Secondary Ion Mass Spectrometry. Hydrostatic pressure retards the diffusivity at 575°C, characterized by an activation volume that is +15% of the atomic volume of Ge. Implications for diffusion mechanisms are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 189
Copyright
Copyright © Materials Research Society 1994

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