Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-14T17:21:10.907Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Pressure on Electronic Structure of Pb1−xSnxTe Alloys Doped with Gallium

Published online by Cambridge University Press:  01 February 2011

Evgeny Pavlovich Skipetrov ,
Alexander Golubev ,
Nikolay Dmitriev  and
Vasily Slyn'ko
Evgeny Pavlovich Skipetrov
Affiliation:
skip@mig.phys.msu.ru, M.V.Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory, 1, Moscow, 119992, Russian Federation, +7 495 9328872
Alexander Golubev
Affiliation:
skip@mig.phys.msu.ru, M.V.Lomonosov Moscow State University, Faculty of Material Sciences, Moscow, N/A, 119992, Russian Federation
Nikolay Dmitriev
Affiliation:
skip@mig.phys.msu.ru, M.V.Lomonosov Moscow State University, Faculty of Physics, Moscow, N/A, 119992, Russian Federation
Vasily Slyn'ko
Affiliation:
sei@chv.ukrpack.net, Institute of Material Science Problems, Chernovtsy, N/A, 274001, Ukraine
Get access

Abstract

The galvanomagnetic effects in the n-Pb1−xSnxTe:Ga (x=0.09-0.21) alloys at the temperatures 4.2≤T≤300 K and under hydrostatic compression up to 16 kbar have been investigated. It is shown that in all samples and in the whole investigated pressure range temperature dependencies of resistivity and Hall coefficient have a “metallic” character, indicating stabilization of Fermi level by the impurity resonant level. Using the experimental data in the frame of two-band dispersion law the dependencies of the free electron concentration and the Fermi level position upon temperature, matrix composition and pressure were calculated. The temperature, composition and pressure coefficients of gallium resonant level movement were obtained and the electronic structure under varying the alloy composition and under pressure were built.

Keywords

electronic structuredopantelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 929: Symposium II – Materials in Extreme Environments , 2006 , 0929-II04-21
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kaidanov, V.I. and Ravich, Yu.I., Sov. Phys. Usp. 28, 31 (1985).Google Scholar
2. Volkov, B.A., Ryabova, L.I., Khokhlov, D.R., Physics-Uspekhi 45, 819 (2002).Google Scholar
3. Sizov, F.F., Plyacko, S.V., Lakeenkov, V.M., Sov. Phys. Semicond. 19, 368 (1985).Google Scholar
4. Bushmarina, G.S., Gruzinov, B.F., Dedegkaev, T.T., Drabkin, I.A., Zhukova, T.B., and E.Ya. Lev, Inorg. Mater. 16, 1460 (1980).Google Scholar
5. Feit, Z., Eger, D., Zemel, A., Phys. Rev. B31, 3903 (1985).Google Scholar
6. Skipetrov, E.P., Zvereva, E.A., Volkova, O.S., Slyn'ko, E.I., Mousalitin, A.M., Mater. Sci. Eng. B91–92, 416 (2002).Google Scholar
7. Skipetrov, E., Zvereva, E., Kovalev, B., Slyn'ko, E., Phys. Stat. Sol. (b) 241, 120 (2004).Google Scholar
8. Slyn'ko, V.E., Visnyk Lviv Univ., Ser. Physic. 34, 291 (2001).Google Scholar
9. Dornhaus, R., Nimtz, G. and Schlicht, B., Narrow-Gap Semiconductors (Springer-Verlag, Berlin, 1983).Google Scholar
10. Akimov, B.A., Vadhva, R.S. and Chudinov, S.M., Sov. Phys. Semicond. 12, 1146 (1978).Google Scholar