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Effect of Substrate Surface Structure and Deposition Conditions on the Microstructure of Tin Dioxide Thin Films Synthesized by Femtosecond Pulsed Laser Deposition

Published online by Cambridge University Press:  21 March 2011

J. E. Dominguez
Affiliation:
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109
L. Fu
Affiliation:
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109
P. A. Van Rompay
Affiliation:
Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109
Z. Y. Zhang
Affiliation:
Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109
J. A. Nees
Affiliation:
Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109
P. P. Pronko
Affiliation:
Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109
X. Q. Pan
Affiliation:
Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109
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Abstract

Tin oxide films were deposited on sapphire and silicon substrates using reactive femtosecond pulsed laser deposition at temperatures ranging from room temperature to 700°C. The effect of electrical discharge and background oxygen pressure on the thin film microstructure was studied. The microstructure of the films was characterized by transmission electron microscopy and x-ray diffraction. SnO2 films fabricated consist of different textures in microstructures that depend on the deposition conditions and substrate surface structures. For instance, films deposited on the (1012) sapphire (R-cut) are amorphous if deposited at room temperature, whereas films deposited at 700°C were epitaxial, single crystalline. Discharge and oxygen pressure had a strong effect on the ion/neutral ratio of the ablated plasma plume of SnO2.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

1. Shimizu, Y. and Egashira, M., MRS Bulletin, 24, 18 (1999)Google Scholar
2. Azad, A.M., Akbar, S.A., Mhaisalkar, S.G., Birkefeld, L.D. and Goto, K.S., J. Electrochem. Soc., 139, 3690 (1992)Google Scholar
3. Williams, G. and Coles, G. S. V., MRS Bulletin, 24, 25 (1999)Google Scholar
4. Kazmerski, L. L., Polycrystalline and Amorphous Thin Films and Devices, Academic Press, New York, 1980.Google Scholar
5. Semancik, S. and Cavicchi, R.E., Thin Solid Films, 206, 81 (1991)Google Scholar