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The Effect of Surface Structure on the Epitaxial Growth of Si on CoSi2(111)

Published online by Cambridge University Press:  25 February 2011

R. T. Tung  and
F. Hellman
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Hellman
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Two distinctively different structures were found on CoSi2(111), the CoSi2-C and the CoSi2-S, which correspond to, respectively, an essentially bulk-terminated surface and one which consists of an additional Si double layer. Details of the two structures suggest new growth techniques for Si epitaxy. Single crystal Si layers with either identical orientation as the silicide or a 180°-rotated orientation can be fabricated by use of carefully designed Si templates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 65
Copyright
Copyright © Materials Research Society 1987

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References

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