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Effect of the Depletion Region of a-Si:H Schottky Diodes on the Time-of-Flight Mobility-Lifetime Product

Published online by Cambridge University Press:  25 February 2011

N. Wyrsch ,
P. Roca i Cabarrocas ,
S. Wagner  and
V. Viret
N. Wyrsch
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544.
P. Roca i Cabarrocas
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544.
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544.
V. Viret
Affiliation:
Institute of Microtechnology, University of Neuchâtel, Breguet 2, CH-2000 Neuchatel, Switzerland.
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Abstract

The effect of the depletion region in amorphous silicon Schottky diodes on the mobility-deep trapping lifetime product μτ of electrons has been investigated using transient photoconductivity techniques. We varied the laser wavelength of the exciting laser in time-of-flight (TOF) measurements. The results are correlated with measurements of the internal field by means of the charge collection efficiency, and with measurement of the deep-trapping time by the Delayed-Field TOF technique (DFTOF). We find that the electron μτ decreases from the bulk toward the top surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 329
Copyright
Copyright © Materials Research Society 1990

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References

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