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Effect of the Inter-Subband Scattering in Modulation-Doped AlxGa1-xN/GaN Heterostructures

Published online by Cambridge University Press:  21 March 2011

Z. W. Zheng ,
B. Shen ,
C. P. Jiang ,
S. L. Guo ,
J. Liu ,
H. M. Zhou ,
R. Zhang ,
Y. Shi ,
Y. D. Zheng  and
G. Z. Zheng
...Show all authors
Z. W. Zheng
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
B. Shen
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
C. P. Jiang
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
S. L. Guo
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
J. Liu
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
H. M. Zhou
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
R. Zhang
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
Y. Shi
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
Y. D. Zheng
Affiliation:
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
G. Z. Zheng
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
J. H. Chu
Affiliation:
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
T. Someya
Affiliation:
Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan
Y. Arakawa
Affiliation:
Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, Japan
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Abstract

Magnetotransport properties of Al0.22Ga0.78N/GaN modulation-doped heterostructures have been studied at low temperatures and high magnetic fields. The inter-subband scattering of the two-dimensional electron gas was observed. The inter-subband scattering is very weak and depends weakly on temperature when temperature is between 1.3 K and 10 K and becomes stronger with increasing temperature when temperature is higher than 10 K. The strain relaxation of the Al0.22Ga0.78N layer influences the inter-subband scattering. It is suggested that the inter-subband scattering is dominant by the elastic scattering when temperature is lower than 10 K, and changes to be dominant by the inelastic scattering of the acoustic phonons when temperature is higher than 10 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I6.34.1
Copyright
Copyright © Materials Research Society 2002

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References

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