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Effect of TiW As Adhesion Layer And Underlying Metal On Electromigration Characteristics of Tungsten Via Plugs

Published online by Cambridge University Press:  21 February 2011

Kamesh Gadepally ,
Padala Krishna Reddy ,
Siew Niew ,
Richard Merrill ,
Rajeeva Lahri  and
Madan Biswal
Kamesh Gadepally
Affiliation:
Technology Development, Fairchild Research Center, National Semiconductor Corporation, Santa Clara, CA 95052-8090
Padala Krishna Reddy
Affiliation:
Technology Development, Fairchild Research Center, National Semiconductor Corporation, Santa Clara, CA 95052-8090
Siew Niew
Affiliation:
Technology Development, Fairchild Research Center, National Semiconductor Corporation, Santa Clara, CA 95052-8090
Richard Merrill
Affiliation:
Technology Development, Fairchild Research Center, National Semiconductor Corporation, Santa Clara, CA 95052-8090
Rajeeva Lahri
Affiliation:
Technology Development, Fairchild Research Center, National Semiconductor Corporation, Santa Clara, CA 95052-8090
Madan Biswal
Affiliation:
Technology Development, Fairchild Research Center, National Semiconductor Corporation, Santa Clara, CA 95052-8090
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Abstract

The use of Tungsten plug technology to obtain good step coverage in vias and contacts is a well know fact. The effect of TiW as an adhesion layer between the plug and the overlying Aluminum is shown in this paper to have a significant impact on the electromigration characteristics of this scheme. A comparison between plug and non-plug technology is also made keeping the aspect ratios the same. Also discussed in this paper will be the effect of the first metal (Tungsten vs Aluminum) on electromigration characteristics. Constant current DC electromigration stressing was performed on via chains and the results are discussed. Discussed, also, are SEM cross sections (XSEM) of the stressed vias indicating the failure modes. An idealized metal scheme will be presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 161
Copyright
Copyright © Materials Research Society 1993

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