Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-01-29T23:58:47.139Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effect Of Uniaxial Stress on the Infrared Absorption Bands Due to the Oxygen Donor in Silicon

Published online by Cambridge University Press:  28 February 2011

M. Stavola ,
K. M. Lee ,
J. C. Nabity ,
P. E. Freeland  and
L. C. Kimerling
M. Stavola
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
K. M. Lee
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. C. Nabity
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
P. E. Freeland
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. C. Kimerling
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Get access

Abstract

ABSTRACT:

We have investigated the effect of stress upon the infrared absorption spectrum of the neutral charge state of the oxygen donor in silicon. Our results show that the central cell of the donor has C2ν, symmetry and that this anisotropy gives rise to a ground state wave function that is constructed from a single pair of conduction band valleys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 257
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Bourret, A. in 13th Int. Conf. on Defects in Semiconductors, edited by Kimerling, L. C. and Parsey, J. M. Jr, (The Metallurgical Soc. of AIME, New York, 1985) p. 129.Google Scholar
[2] Stavola, M. and Snyder, L. C. in Defects in Silicon, edited by Bullis, W. M. and Kimerling, L. C. (Electrochem. Soc., Pennington, NJ, 1983) p. 61.Google Scholar
[3] Oehrlein, G. S. and Corbett, J. W. in Defects in Semiconductors II, edited by Mahajan, S. and Corbett, J. W. (North Holland, New York, 1983) p. 107.Google Scholar
[4] Wruck, D. and Gaworzewski, P., Phys. Stat. Sol. (a) 56, 557 (1979).CrossRefGoogle Scholar
[5] Oeder, R. and Wagner, P. in Defects in Semiconductors II, op. cit., p. 171.Google Scholar
[61 Pajot, B., Compain, H., Leroneille, J., and Clerjaud, B., Physica 117B and 118B, 110 (1983).Google Scholar
[7] Ramdas, A. K. and Rodriguez, S., Rep. Prog. Phys. 44, 1297 (1981).CrossRefGoogle Scholar
[8] Tekippe, V. J., Chandrasekhar, H. R., Fisher, P., and Ramdas, A. K., Phys. Rev. B 6, 2348 (1972).CrossRefGoogle Scholar
[9] Kohn, W. in Solid State Physics vol. 5, edited by Seitz, F. and Turnbull, D. (Academic, New York, 1957) p. 257.Google Scholar
[10] Wagner, P. and Holm, C., 13th Int. Conf. on Defects in Semiconductors, op. cit., p. 677. These authors comment on the absence of stress induced splittings for [001] stress.Google Scholar
[11] Jagannath, C. and Ramdas, A. K., Phys. Rev. B 23,4426 (1981).CrossRefGoogle Scholar
[12] Watkins, G. D. and Ham, F. S., Phys. Rev. B 1, 4071 (1970).CrossRefGoogle Scholar
[13] Watkins, G. D. suggested that the oxygen donor ground state wave function was constructed from a conduction band valley pair like for Li in Si (ref. 12) at the 13th Int. Conf. on Defects in Semiconductors, Coronado, CA.Google Scholar
[14] Farmer, J. W., Meese, J. M., Henry, P. M., and Lamp, C. D., 13th Int. Conf. on Defects in Semiconductors, op. cit., p. 639.Google Scholar
[15] Benton, J. L., Lee, K. M., Freeland, P. E., and Kimerling, L. C.,13th Int. Conf. on Defects in Semiconductors ., p. 647.Google Scholar
[16] Kaplyanskii, A. A., Sov. Phys. - Opt. Spectrosc. 16, 329 (1964).Google Scholar
[17] Lee, K. M., Watkins, G. D. and Trombetta, J., published in this volume.Google Scholar