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Effect of V/III ratio on the growth of hexagonal boron nitride by MOCVD

Published online by Cambridge University Press:  24 February 2015

Qing S. Paduano ,
Michael Snure  and
Jodie Shoaf
Qing S. Paduano
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
Michael Snure
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH
Jodie Shoaf
Affiliation:
Wyle Laboratories, Inc., Dayton, OH
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Abstract

In this report, we describe a process for achieving atomically smooth, few-layer thick, hexagonal boron nitride (h-BN) films on sapphire substrates by MOCVD, using Triethylboron (TEB) and NH3 as precursors. Two different growth modes have been observed depending on the V/III ratio. Three-dimensional (3D) island growth is dominant in the low V/III range; in this range growth rate decreases with increasing deposition temperature. This island growth mode transitions to a self-terminating growth mode when V/III > 2000, over the entire deposition temperature range studied (i.e. 1000-1080oC). Raman spectroscopy verifies the h-BN phase of these films, and atomic force microscopy measurements confirm that the surfaces are smooth and continuous, even over atomic steps on the surface of the substrate. Using X-ray reflectance measurements, the thickness of each film grown under a range of conditions and times was determined to consistently terminate at 1.6nm, with a variation of less than 0.2 nm. Thus we have identified a self-terminating growth mode that enables robust synthesis of h-BN with highly uniform and reliable thickness on non-metal catalyzed substrates. Furthermore, this self-terminating growth behavior has shown signs of transitioning to continuous growth as deposition temperature increases.

Keywords

chemical vapor deposition (CVD) (deposition)thin filmRaman spectroscopy
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1726: Symposium J – Emerging Non-Graphene 2D Atomic Layers and van der Waals Solids , 2015 , mrsf14-1726-j04-26
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Silly, M. G., Jaffrennou, P., Barjon, J., Lauret, J. S., Ducastelle, F., Loiseau, A., Obraztsova, E., Attal-Tretout, B., and Rosencher, E., Phys. Rev. B 75, 085205 (2007).CrossRefGoogle Scholar
Kobayashi, Y., Nakamura, T., Akasaka, T., Makimoto, T., and Matsumoto, N., J. Crystal Growth, 298 325 (2007).CrossRefGoogle Scholar
Zhang, S., Chen, G., Wang, B., Zhang, D., and Yan, H., J. Crystal Growth, 223, 545 (2001).CrossRefGoogle Scholar
Nakamura, T., J. Electrochem. Soc. 133, 1120 (1986).CrossRefGoogle Scholar
Cubarovs, M., Pedersen, H., Högberg, H., Darakchieva, V., Jens, J., Persson, P., and Henry, A., Physica Status Solidi. Rapid Research Letters, (5), 10-11, 397 (2011).Google Scholar
Kobayashi, Y. and Akasaka, T., J. Crystal Growth, 310 5044 (2008).CrossRefGoogle Scholar
Paduano, Q. S., Snuer, M., Bondy, J., and Zens, T.W.C., Appl. Phys. Exp. 7, 071004 (2014).CrossRefGoogle Scholar
Diwikusuma, F. and Kuech, T. F., J. Appl. Phys. 94, 5656 (2003).CrossRefGoogle Scholar
De Yoreo, J. J. and Vekilov, P. G., Reviews in Mineralogy and Geochemistry 54, (1) 57 (2003).CrossRefGoogle Scholar
Rozenberg, A. S., Sinenko, Y. A., and Chukanov, N. V., J. Mat. Sci. 28, 5675(1993).CrossRefGoogle Scholar
Nemanich, R. J., Solin, S. A., and Martin, R. M., Phys. Rev. B 23, 6348(1981).CrossRefGoogle Scholar
Ismach, A., Chou, H., Ferrer, D. A., Wu, Y., McDonnell, S., , H, Floresca, C., Covacevich, A., Pope, C., Piner, R., Kim, M. J., Wallace, R. M., Colombo, L., and Ruoff, R. S., ACS Nano, 6(7), 6378 (2012).CrossRefGoogle Scholar