Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-13T02:11:29.189Z Has data issue: false hasContentIssue false

Effect of Zn Addition on the Interfacial Reactions between Cu and Lead-Free Solders

Published online by Cambridge University Press:  26 February 2011

Su-Chun Yang
Affiliation:
93324008@cc.ncu.edu.tw, National Central University, Department of Chemical & Materials Engineering, No.300, Jhongda Rd.,, Jhongli City, 32001, Taiwan, +886233662745
Cheng-En Ho
Affiliation:
ceho1975@hotmail.com, National Central University, Department of Chemical & Materials Engineering, No.300, Jhongda Rd.,, Jhongli City, 32001, Taiwan
Chien-Wei Chang
Affiliation:
s13242019@cc.ncu.edu.tw, National Central University, Department of Chemical & Materials Engineering, No.300, Jhongda Rd.,, Jhongli City, 32001, Taiwan
C. Robert Kao
Affiliation:
kaocr@hotmail.com, National Taiwan University, Department of Materials Science & Engineering, No. 1, Sec. 4, Roosevelt Road, Taipei, 10617, Taiwan
Get access

Abstract

Recently, it was reported that adding Zn to solder was an effective way for reducing the formation of both Cu3Sn and Cu6Sn5 and inhibiting Kirkendall voids formation. The objective of this study is to investigate this Zn effect in detail. Three Sn-xZn solders (x = 0.5, 0.7, and 2 wt. %) were reacted with Cu substrates at 250°J for 2-10 mins. A slight variation in the Zn concentration changed the reaction product formed at the interface. When the Zn concentration was low (x = 0.5 wt. %), the reaction product was Cu6Sn5. At high Zn concentration (x = 2 wt. %), the reaction product became Cu5Zn8. When Zn concentration was in-between (x = 0.7 wt. %), Cu6Sn5 and CuZn co-existed. The above findings are explained using the Cu–Sn–Zn phase diagram. The implication is that the type of compound forms at the interface can be controlled by adjusting the Zn concentration of the Sn-based solders.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Anderson, I. E. and Harringa, J. L., J. Electron. Mater., 35, 94 (2006).Google Scholar
2. McCormack, M., Jin, S., Kammlott, G. W., and Chen, H. S., Appl. Phys. Lett., 63, 15 (1993).Google Scholar
3. Kang, S. K., Shih, D. Y., Leonard, D., Henderson, D. W., Gosselin, T., Cho, S., Yu, J., and Choi, W. K., JOM, 56, 34 (2004).Google Scholar
4. Kang, S. K., Leonard, D., Shih, D. Y., Gignac, L., Henderson, D. W., Cho, S., and Yu, J., J. Electron. Mater., 35, 479 (2006).Google Scholar
5. Lee, H. M., Yoon, S. W., and Lee, B. J., J. Electron. Mater., 27, 1161 (1998).Google Scholar
6. Huang, C. W. and Lin, K. L., J. Mater. Res., 19, 3560 (2004).Google Scholar
7. Yang, S. C., Ho, C. E., Chang, C. W., and Kao, C. R., J. Mater. Res., 21, 1 (2006).Google Scholar
8. Shiau, L. C., Ho, C. E., and Kao, C. R., Solder. And Surf. Mount Tech., 14/3, 25 (2002).Google Scholar
9. Ho, C. E., Lin, Y. W., Yang, S. C., Kao, C. R., and Jiang, D. S., J. Electron. Mater., 35, 1017 (2006).Google Scholar
10. Ho, C. E., Yang, S. C., and Kao, C. R., J Mater Sci-Mater El, in press (2006).Google Scholar
11. Tu, K. N. and Thompson, R. D., Acta Metall., 30, 947 (1982).Google Scholar
12. Bader, S., Gust, W., and Hieber, H., Acta Metall. Mater., 43, 329 (1995).Google Scholar
13. Chou, C. Y. and Chen, S. W., Acta Mater., 54, 2393 (2006).Google Scholar