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Effects of annealing on donor and acceptor concentrations in Ga-doped ZnO thin films

Published online by Cambridge University Press:  31 January 2011

David C. Look ,
Kartik Ghosh  and
Kevin Leedy
David C. Look
Affiliation:
david.look@wright.edudavid.look@wpafb.af.mil, Wright State University, Semiconductor Research Center, Dayton, Ohio, United States
Kartik Ghosh
Affiliation:
KartikGhosh@missouristate.edu, Missouri State University, Physics, Astronomy and Materials Science, 901 S. National Avenue, Springfield, Missouri, 65897, United States, 417-836-6205, 417-836-6226
Kevin Leedy
Affiliation:
Kevin.Leedy@WPAFB.AF.MIL, Air Force Research Laboratory, AFRL/RYDD, 2241 Avionics Cir, Bldg 620, WAPFB, Ohio, 45433, United States, 9372551874
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Abstract

Temperature-dependent Hall-effect measurements have been performed on three Ga-doped ZnO thin films of various thicknesses (65, 177, and 283 nm), grown by pulsed laser deposition at 400 °C and annealed at 400 °C for 10 min in Ar, N2, or forming-gas (5% H2 in Ar). The donor ND and acceptor NAconcentrations as a function of sample thickness and annealing conditions are determined by a new formalism that involves only ionized-impurity and boundary scattering. Before annealing, the samples are highly compensated, with ND = (2.8 ± 0.3) × 1020 cm-3 and NA = (2.6 ± 0.2) × 1020 cm-3. After annealing in Ar the samples are less compensated, with ND = (3.7 ± 0.1) × 1020 cm-3 and NA = (2.0 ± 0.1) × 1020 cm-3; furthermore, these quantities are nearly independent of thickness. However, after annealing in N2 and forming-gas, ND and NA are thickness dependent, partly due to depth-dependent diffusion of N2 and H, respectively.

Keywords

annealingelectrical propertiesHall effect
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H02-06
Copyright
Copyright © Materials Research Society 2010

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References

1 Manami, T., Semicond. Sci. Technol. 20, S35 (2005).10.1088/0268-1242/20/4/004Google Scholar
2 Look, D.C., Mater. Sci. and Eng. B 80, 383 (2001).10.1016/S0921-5107(00)00604-8Google Scholar
3 Pearton, S.J., Norton, D.P., Ip, K., Heo, Y.W., and Steiner, T., Prog. In Mater. Sci. 50, 293 (2005).10.1016/j.pmatsci.2004.04.001Google Scholar
4 Ozgur, U., Alivov, Y.I., Liu, C., Teke, A., Reshchikov, M.A., Dogan, S., Avrutin, V., Cho, S.J., and Morkoc, H., J. Appl. Phys. 98, 041301 (2005).10.1063/1.1992666Google Scholar
5 Look, D.C., Electrical Characterization of GaAs Materials and Devices (Wiley, New York, 1989).Google Scholar
6 Bayraktaroglu, B., Leedy, K., and Bedford, R., Appl. Phys. Lett. 93, 022104 (2008).10.1063/1.2959071Google Scholar
7 Look, D.C., Leedy, K.D., Tomich, D.H., and Bayraktaroglu, B., Appl. Phys. Lett., accepted for publication.Google Scholar
8 Tuomisto, F., Ranki, V., Saarinen, K., and Look, D.C., Phys. Rev. Lett. 91, 205502 (2003).10.1103/PhysRevLett.91.205502Google Scholar
9 Lavrov, E.V., Weber, J., Börrnert, F., Walle, C.G. Van de, and Helbig, R., Phys. Rev. B 66, 165205 (2002).10.1103/PhysRevB.66.165205Google Scholar
10 Limpijumnong, S., Li, X., Wei, S.-H., and Zhang, S.B., Physica B 376-377, 686 (2006).10.1016/j.physb.2005.12.172Google Scholar