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Effects of Arsenic Doping on the Solidification Dynamics of Pulsed-Laser-Melted Silicon

Published online by Cambridge University Press:  25 February 2011

Michael O. Thompson ,
P. S. Peercy  and
J. Y. Tsao
Michael O. Thompson
Affiliation:
On leave Dept. of Materials ScienceCornell University, Ithaca,NY14853
P. S. Peercy
Affiliation:
Sandia National Laboratories, Albuquerque, NM87185
J. Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM87185
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Abstract

The effects of arsenic doping on the solidification dynamics during pulsed melting of silicon have been studied using the transient conductance technique. At As concentrations below 1 at.%, the incorporation of As into the Si lattice results in negligible differences in the solidification dynamics. Between 2 and 7 at.% As, however, the interface velocity is dramatically modified as the liquid-solid interface crosses the As containing region. These velocity changes are consistent with a reduced melting temperature for Si-As alloys. For concentrations of 11 at.% As, the depression in the melting temperature is sufficient to allow the surface to solidify while considerable melt remains buried within the sample. At 16 at.%, the melting temperature is drastically reduced and internal nucleation of melt occurs prior to normal surface melting.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 169
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. Poate, J. M. in Laser and Electron Beam Interactions with Solids, edited by Appleton, B. R. and Celler, G. K., (North Holland, New York, 1981), p. 121.Google Scholar
2. White, C. W., Appleton, B. R. and Wilson, S. R., in Laser Annealing of Semiconductors. Poate, J. M., Mayer, J. W., Eds. (Academic Press, New York, 1982).Google Scholar
3. Jackson, K. A., in Surface Modification and Alloying bv Laser. Ion and Electron Beams, edited by Poate, J. M., Foti, G. and Jacobson, D. C. (Plenum, New York, 1983), Chapter 3.Google Scholar
4. Aziz, M. J., J. Appl. Phys. 53, 1158 (1982).Google Scholar
5. Galvin, G. J., Mayer, J. W. and Peercy, P. S., in Energy Beam-Solid Interactions and Transient Thermal Processing, edited by Fan, J. C. C. and Johnson, N. M. (North Holland, New York, 1984), p. 111.Google Scholar
6. Thompson, Michael O. and Galvin, G. J., in Laser-Solid Interactions and Transient Thermal Processing of Materials, edited by Narayan, J., Brown, W. L. and Lemons, R. A., (North Holland, New York, 1983), p. 57.Google Scholar
7. Campisano, S. U., Jacobson, D. C., Poate, J. M., Cullis, A. G. and Chew, N. G., Appl. Phys. Lett, 45, 1216 (1984).Google Scholar
8. Cullis, A. G., Webber, H. C. and Bailey, P., J. Phys. E. 12, 688 (1979).Google Scholar
9. Thompson, Michael O., Ph. D Thesis, Cornell university, Ithaca, NY, 1984.Google Scholar
10. Auston, D. H., Surko, C.M., Venkatesan, T. N. C., Slusher, R. E. and Golovchenko, J. A., Appl. Phys. Lett. 33, 437 (1978).Google Scholar
11. Thompson, Michael O., Galvin, G. J., Mayer, J. W., Peercy, P. S., Poate, J. M., Jacobson, D. C., Cullis, A. G. and Chew, N. G., Phys. Rev. Lett. 52, 2360 (1984).Google Scholar