Hostname: page-component-6bf8c574d5-vmclg Total loading time: 0 Render date: 2025-02-22T20:52:09.346Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effects of Dopants on Surface-Energy-Driven Secondary Grain Growth in Ultrathin Si Films

Published online by Cambridge University Press:  26 February 2011

H.-J. Kim  and
C. V. Thompson
H.-J. Kim
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
C. V. Thompson
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Get access

Abstract

Secondary or abnormal grain growth has been observed in ultrathin films of silicon (<120nm) that were heavily doped with phosphorous or arsenic. This grain growth leads to grains which are much larger than the film thickness (>50x) and which have uniform (111) texture. This abnormal grain growth is believed to be driven, in part, by surface energy minimization and hence is termed surface-energy-driven secondary grain growth.

It was found that n-type dopants, phosphorous and arsenic, markedly enhance the rate of secondary grain growth as seen through a lowering of the temperature required for significant growth. On the other hand, boron (a p-type dopant) appears to neither markedly increase nor decrease the rate of grain growth. Enhancement caused by phosphorous or arsenic is thought to stem from increases in the mobility of the grain boundaries. Enhancement of grain boundary mobility was found to be compensated (reduced or eliminated) by additional doping with boron.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 729
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Beck, P.A., Dremer, J.C., Demer, L.J. and Holzworth, M.L., Trans. AIME 175, 372 (1948).Google Scholar
2 Mullins, W.W., Acta. Met., 6, 414 (1958).Google Scholar
3 Palmer, J.E., Master's Thesis, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (1985).Google Scholar
4 Thompson, C.V. and Smith, H.I., Appl. Phys. Lett. 44, 603, (1984).Google Scholar
5 Thompson, C.V., J. Appl. Phys., 58, 763 (1985).Google Scholar
6 Wada, Y. and Nishimatsu, S., J. Electrochem. Soc. J. 25, 1499 (1978).Google Scholar
7 Mei, L., Rivier, M., Kwark, Y. and Dutton, R.W., J. Electrochem. Soc. 129, 1791 (1982).Google Scholar
8 Kim, H.-J. and Thompson, C.V., to appear in Appl. Phys. Letts.Google Scholar
9 Kim, H.-J. and Thompson, C.V., to appear in the Proceedings of the Japan Inst. of Metals Int'l. Symp. 4 on Grain Boundary Structure and RElated Phenomena, Minakami, Japan, Nov. 1985.Google Scholar
10 Fair, R.B. and Tsai, J.C.C., J. Electrochem. Soc., 124, 1107 (1977).Google Scholar
11 Makris, J.S. and Masters, B.J., J. Electrochem Soc, 120, 1252 (1973).Google Scholar
12 Fair, R.B. and Tsai, J.C.C., J. Electrochem. Soc, 122, 1689 (1975).Google Scholar
13 Patel, J.R., Testardi, L.R. and Freeland, P.E., Phys. Rev. B, 13 3548 (1976).Google Scholar
14 Smith, D.A. and Tan, T.Y., Mat. Res. Soc Symp. Proc. 5, 65 (1982).Google Scholar