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Effects of Erbium alloying on the structural and piezoelectric properties of Aluminum Nitride thin films annealed under extreme thermal conditions

Published online by Cambridge University Press:  25 January 2013

V. Narang  and
D. Korakakis
V. Narang
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506-6315, U.S.A
D. Korakakis
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
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Abstract

Effects of adding Erbium(Er) to Aluminum Nitride thin films on their structural and piezoelectric are reported along with stability of the films after annealing them at temperatures up to 600° C. The thin films samples were deposited on the (001) p-type silicon substrates by reactive magnetron sputtering, using the Er alloyed Aluminum targets with Er atomic concentrations of 0, 1, 3 and 4% and the magnetron sputtering power of 200 W. The samples were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XPS analysis was used to confirm the stoichiometry of AlN phase, Er atomic content and its possible chemical state in the films. Results show that alloying with Er results in higher piezoelectric coefficient d33 as compared to that in Er-free AlN thin films. Structural analysis of the films by XRD shows the shift of (0002) AlN peak to lower 2θ values upon Er doping, indicating the presence of uniform internal compressive stress.

Keywords

piezoelectricx-ray diffraction (XRD)structural
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1519: Symposium MM – Materials under Extreme Environments , 2013 , mrsf12-1519-mm03-28
Copyright
Copyright © Materials Research Society 2013

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References

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