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Effects of Grain Boundary on the Ferroelectric Properties of Selectively Grown PZT Thin Films

Published online by Cambridge University Press:  10 February 2011

Jang-Sik Lee ,
Eung-Chul Park ,
Jung-Ho Park ,
Byung-Il Lee  and
Seung-Ki Joo
Jang-Sik Lee
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151–742, Korea, cleancut@plazal.snu.ac.kr
Eung-Chul Park
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151–742, Korea, cleancut@plazal.snu.ac.kr
Jung-Ho Park
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151–742, Korea, cleancut@plazal.snu.ac.kr
Byung-Il Lee
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151–742, Korea, cleancut@plazal.snu.ac.kr
Seung-Ki Joo
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151–742, Korea, cleancut@plazal.snu.ac.kr
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Abstract

The effects of grain boundaries on the characteristics of the PZT thin films using single-grained PZT array by selective nucleation and growth method were investigated by locating the upper Pt electrode of 8 μm× 8 μm sized square directly on the single grains, 1 grain boundary and 4 grain boundaries in a controlled manner. It turned out that when there was no grain boundary, the best ferroelectric and electrical performance were obtained as expected. However, serious degradation was observed in polarization, leakage current, breakdown field and fatigue characteristics when grain boundary was contained in the area measured. This is the first qualitative investigation about the effects of the grain boundaries on the ferroelectric and electrical performance of the PZT thin films. It was found that degradation of the PZT thin films was accelerated with increasing the length of the grain boundaries within the top electrode and the main source of degradation in PZT thin films is grain boundary.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 315
Copyright
Copyright © Materials Research Society 2000

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References

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