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The Effects of High Temperature Annealing and Composition on the Dielectric Properties of Thin Films of BaxSrzTiO3

Published online by Cambridge University Press:  10 February 2011

Adriaan C. Carter ,
James S. Horwitz ,
Douglas B. Chrisey ,
Jeffrey M. Pond ,
Steven W. Kirchoefer ,
Wontae. Chang  and
Patricia Loferski
Adriaan C. Carter
Affiliation:
Naval Research Laboratory, Washington, DC 20375.
James S. Horwitz
Affiliation:
Naval Research Laboratory, Washington, DC 20375.
Douglas B. Chrisey
Affiliation:
Naval Research Laboratory, Washington, DC 20375.
Jeffrey M. Pond
Affiliation:
Naval Research Laboratory, Washington, DC 20375.
Steven W. Kirchoefer
Affiliation:
Naval Research Laboratory, Washington, DC 20375.
Wontae. Chang
Affiliation:
Naval Research Laboratory, Washington, DC 20375.
Patricia Loferski
Affiliation:
Naval Research Laboratory, Washington, DC 20375.
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Abstract

Single phase, (100) oriented Ba0.5Sr0.5TiO3 films have been deposited by pulsed laser deposition onto (100) LaAIO3, SrTiO3, MgO substrates. The dielectric properties of these films were measured using interdigitated capacitors as a function of DC bias and temperature at 1 MHz and as a function of DC bias at 1 to 20 GHz at room temperature. Deposited films were annealed over a temperature range of 900 to 1350 C for 1 to 8 hours to observe its effect on dielectric properties. Chemical analysis on films deposited from stoichiometric targets showed the films to be up to 6% deficient in Ba and Sr under typical PLD deposition conditions. Optimal annealing conditions and target stoichiometries for minimizing dielectric loss and maximizing tuning are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 347
Copyright
Copyright © Materials Research Society 1998

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References

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