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EFFECTS OF INTERELECTRODE SPACING ON THE PROPERTIES OF MICROCRYSTALLINE SILICON ABSORBER AND SOLAR CELLS

Published online by Cambridge University Press:  07 June 2012

Bill Nemeth ,
Xiaodan Zhang ,
Yanfa Yan  and
Qi Wang
Bill Nemeth*
Affiliation:
National Renewable Energy Laboratory, Golden, CO, 80401
Xiaodan Zhang
Affiliation:
Institute of Photo-electronic Thin Film Devices and Technology of Nankai University, Tianjin 300071, China
Yanfa Yan
Affiliation:
Department of Physics, University of Toledo, Toledo, OH.
Qi Wang
Affiliation:
National Renewable Energy Laboratory, Golden, CO, 80401
*
*Email: william.nemeth@nrel.gov
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Abstract

We study the effect of the spacing between electrodes in very high frequency plasma enhanced chemical vapor deposition on the properties of microcrystalline silicon films and their related n-i-psolar cells. We vary the spacing from 0.2 to 1.0 cm to deposit microcrystalline silicon at 67.8 MHz while maintaining other growth parameters. The spacing between the electrodes significantly changes the plasma conditions, which govern film precursor chemistry as well as introduce etching and ion bombardment to the film; thereby, influencing nucleation and growth of the microcrystalline Si films. The resulting films were characterized by UV-Vis spectrometry, atomic force microscopy, X-ray diffraction, and transmission electron microscopy. We found that deposition rate decreases, while surface roughness and short circuit current density increase with smaller spacing.

Keywords

photovoltaicmicrostructureSi
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 105 - 110
Copyright
Copyright © Materials Research Society 2012

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References

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