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Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering

Published online by Cambridge University Press:  10 February 2015

Tomoaki Ide ,
Koichi Matsushima ,
Ryota Shimizu ,
Daisuke Yamashita ,
Hynwoong Seo ,
Kazunori Koga ,
Masaharu Shiratani  and
Naho Itagaki
Tomoaki Ide
Affiliation:
Kyushu University, Motooka 744, Fukuoka, 819-0395, Japan
Koichi Matsushima
Affiliation:
Kyushu University, Motooka 744, Fukuoka, 819-0395, Japan
Ryota Shimizu
Affiliation:
Kyushu University, Motooka 744, Fukuoka, 819-0395, Japan
Daisuke Yamashita
Affiliation:
Kyushu University, Motooka 744, Fukuoka, 819-0395, Japan
Hynwoong Seo
Affiliation:
Kyushu University, Motooka 744, Fukuoka, 819-0395, Japan
Kazunori Koga
Affiliation:
Kyushu University, Motooka 744, Fukuoka, 819-0395, Japan
Masaharu Shiratani
Affiliation:
Kyushu University, Motooka 744, Fukuoka, 819-0395, Japan
Naho Itagaki
Affiliation:
Kyushu University, Motooka 744, Fukuoka, 819-0395, Japan JST PRESTO, Gobancho, Chiyodaku, Tokyo, 102-0076, Japan
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Abstract

Effects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of “nitrogen mediated crystallization (NMC) method”, where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.

Keywords

sputteringoxidemorphology
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1741: Symposium AA – Synthesis, Processing and Mechanical Properties of Functional Hexagonal Materials , 2015 , mrsf14-1741-aa09-12
Copyright
Copyright © Materials Research Society 2015 

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References

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