Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-14T17:57:41.617Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Non-Planar Surfaces on the Growth of RF Magnetron Sputtered ZnO

Published online by Cambridge University Press:  21 March 2011

A.S. Holland ,
G.K. Reeves  and
P.W. Leech
A.S. Holland
Affiliation:
School of Electrical & Computer Systems Engineering, RMIT University, Melbourne, Vic. 3001, Australia
G.K. Reeves
Affiliation:
School of Electrical & Computer Systems Engineering, RMIT University, Melbourne, Vic. 3001, Australia
P.W. Leech
Affiliation:
Division of Manufacturing Science Technology, CSIRO, Clayton, Vic. 3169, Australia
Get access

Abstract

This paper describes the influence of the topography of a lithographically patterned substrate (aluminium electrodes on a CVD diamond film) on the uniformity of sputtered ZnO films. Diamond films with an average surface roughness of ∼1nm, had aluminium electrodes (thickness 80nm, linewidth/space 2.6μm) patterned on them. ZnO was RF sputtered on to the substrate and the uniformity of the ZnO grain structure was examined using SEM, XRD and AFM. Abrupt changes in topography at the edges of the aluminium electrodes resulted in poor alignment of ZnO grains. SEM/AFM micrographs show misalignment of ZnO grains at the edges of the raised electrodes. When the electrodes were recessed into the diamond film, using a damascene-like process, the SEM/AFM micrographs showed improved grain uniformity of ZnO. XRD showed a significant increase in the c-axis (002) orientation and an absence of the (101) orientation. AFM micrographs also showed the improvement in the ZnO surface topography. These results may be of significance to high frequency Surface Acoustic Wave (SAW) devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 672: Symposium O – Mechanisms of Surface and Microstructure Evolution in Deposited Films and Film Structures , 2001 , O8.21
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Yamanouchi, K., Sakurai, N., Satoh, T., IEEE Ultrasonics Symp. Proceedings, 351–354, (1989).Google Scholar
[2] Shikata, S., Nakahata, H., Higaki, K., Hachigo, A, Fujimori, N., Yamamoto, Y., Sakairi, N., Takahashi, Y., IEEE Ultrasonics Symp. Proceedings, 277–280, (1993).Google Scholar
[3] Nakahata, H., Higaki, K., Hachigo, A, Shikata, S., Fujimori, N., Takahashi, Y., Kajihara, T., Yamamoto, Y., Jpn. J. Appl. Phys., 33, Part 1, No. 1A, 325–328, (1994).Google Scholar
[4] Fujii, S.et al, IEEE Ultrasonics Symp. Proceedings, 183–186, (1997).Google Scholar
[5] Nakahata, H., Kitabayashi, H., Uemura, T., Hachigo, A, Higaki, K., Fujii, S, Seki, Y., Yoshida, K., Shikata, S., Jpn. J. Appl. Phys., 37, Part 1, No. 5B, 2918–2922, (1998).Google Scholar
[6] Glass, J. T., Fox, B. A., Dreifus, D. L., Stoner, B. R., MRS Bulletin, 23 (9), 49–55, (1998).Google Scholar
[7] Hachigo, A., Nakahata, H., Higaki, K., Fujii, S., Shikata, S., Appl. Phys. Lett.,, 65 (20), 2556–2558. (1994).Google Scholar
[8] Hickernell, F. S., IEEE Transactions on Sonics and Ultrasonics, SU–32 (5), 621–629, (1985).Google Scholar
[9] Nakahata, H., Higakai, K., Fujii, S., Hachigo, A., Kitabayashi, H., Tanabe, K., Seki, Y., Shikata, S., IEEE Ultrasonics Symp. Proceedings, pp. 361–370, (1995).Google Scholar
[10] Puchert, M. K., Timbrell, P. Y., Lamb, R. N., J. Vac. Sci. Technol. A, 14 (4), (1996).Google Scholar
[11] Fox, G. R., Setter, N., Limberger, H. G., J. Mater. Res., 11 (8), 2051–2061, (1996).Google Scholar