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Effects of Piezoelectric Fields in GaInN/GaN and GaN/AlGaN Heterostructures and Quantum Wells

Published online by Cambridge University Press:  10 February 2011

Jin Seo Im ,
H. Kollmer ,
J. Off ,
A. Sohmer ,
F. Scholz  and
A. Hangleiter
Jin Seo Im
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germanya.hangleiter@physik.uni-stuttgart.de
H. Kollmer
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germanya.hangleiter@physik.uni-stuttgart.de
J. Off
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germanya.hangleiter@physik.uni-stuttgart.de
A. Sohmer
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germanya.hangleiter@physik.uni-stuttgart.de
F. Scholz
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germanya.hangleiter@physik.uni-stuttgart.de
A. Hangleiter
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart, Germanya.hangleiter@physik.uni-stuttgart.de
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Abstract

The effects of piezoelectric fields on the static and dynamic optical properties of GaInN/GaN and GaN/AIGaN double heterostructures and single quantum wells are studied by time-resolved photoluminescence. We find a strong increase of the luminescence decay time of the dominating transition with well thickness by several orders of magnitude. For well thicknesses larger than about 5 nm, two emission lines with strongly differing decay times are observed, which are attributed to spatially direct and indirect transitions. Our experimental findings are consistently explained by a quantitative model based on the piezoelectric fields in strained wurtzite quantum wells.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 513
Copyright
Copyright © Materials Research Society 1998

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