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Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures

Published online by Cambridge University Press:  01 February 2011

Mark J. Yannuzzi ,
Neil A. Moser ,
Robert C. Fitch ,
Gregg H. Jessen ,
James K. Gillespie ,
Glen D. Via ,
Antonio Crespo ,
Thomas J. Jenkins ,
David C. Look  and
Donald C. Reynolds
Mark J. Yannuzzi
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
Neil A. Moser
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
Robert C. Fitch
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
Gregg H. Jessen
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
James K. Gillespie
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
Glen D. Via
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
Antonio Crespo
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
Thomas J. Jenkins
Affiliation:
Air Force Research Laboratory Sensors Directorate, Electron Devices Wright-Patterson AFB, OH 45433-7322, U.S.A.
David C. Look
Affiliation:
Wright State University Dayton, OH 45435, U.S.A.
Donald C. Reynolds
Affiliation:
Wright State University Dayton, OH 45435, U.S.A.
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Abstract

In an effort to investigate the stability of the surface and hetero-interface of AlGaN/GaN HEMTs during high temperature device processing steps, AlGaN/GaN HEMT samples were subjected to temperatures from 650°C to 1150°C for a period of 30 seconds prior to processing. Hall and photoluminescence measurements were performed on samples before and after temperature stressing. The samples annealed at 700°C and 1150°C were then processed, and electrical parametric data were collected during and after processing. Large increases in HEMT Schottky gate diode reverse leakage current are observed at higher pre-process annealing temperatures, while the low-field mobility decreases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C4.2
Copyright
Copyright © Materials Research Society 2003

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