Hostname: page-component-745bb68f8f-kw2vx Total loading time: 0 Render date: 2025-01-29T23:40:06.025Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effects of SI Addition on the Properties of AICu Films used in Multilevel Metal Systems

Published online by Cambridge University Press:  25 February 2011

S. R. Wilson ,
D. Weston  and
M. Kottke
S. R. Wilson
Affiliation:
Advanced Technology Center, Motorola Semiconductor Products Sector, 2200 W.Broadway Rd., Mesa, AZ 85202
D. Weston
Affiliation:
Advanced Technology Center, Motorola Semiconductor Products Sector, 2200 W.Broadway Rd., Mesa, AZ 85202
M. Kottke
Affiliation:
Advanced Technology Center, Motorola Semiconductor Products Sector, 2200 W.Broadway Rd., Mesa, AZ 85202
Get access

Abstract

This paper reports a systematic study of the properties of Al(Cu 0.5-1.5%) and Al(Cu 0.5-1.5%, Si 0.5-1.5%)alloys. The effects of deposition temperatures ranging from room temperature to 475°C were studied as well as whether the films were deposited on Ti-W or SiO2. The Cu and Si profiles were measured as well as the presence of Al2Cu and Si precipitates. The effects of post deposition bake treatments are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 545
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Totta, P.A., and Sopher, R.P., IBM J. Res. & Dev. 13, 226 (1969).CrossRefGoogle Scholar
2. Wilson, S.R., Thomas, Simon and Krause, S.J., Inst. Phys. Conf. Ser. No. 87, p375 (1987).Google Scholar
3. Lee, Wen-Yaung, Eldridge, J.M. and Schwartz, G.C., J. Appl. Phys., 52, 2994 (1981).CrossRefGoogle Scholar
4. Weston, D., Wilson, S.R., and Kottke, M., J. Vac. Sci. Technol. A, in press.Google Scholar
5. Kobayashi, T., Kitahara, H. and Hosokawa, N., J. Vac. Sci. Technol., A5, 2088 (1987).CrossRefGoogle Scholar
6. Wilson, S.R., Duffin, R.L., Weston, D., and Mattox, R.J., to be presented Spring 1990 Meeting of the Electrochemical Society, Montreal.Google Scholar
7. Hawkins, D.T. and Hultgren, R. Metals Handbook, 8th edition, Lyman, T., ed., (American Society for Metals, Metals Park, Ohio, 1973) p. 259.Google Scholar