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The Effects of Strain on The Magnetic Anisotropy of Doped Manganite Thin Films

Published online by Cambridge University Press:  15 February 2011

Y. Suzuki ,
C. Tsai ,
H. Y. Hwang ,
S-W. Cheong  and
R. B. Van Dover
Y. Suzuki
Affiliation:
Dcpt. Materials Science and Engineering, Cornell University, Ithaca, NY 14853
C. Tsai
Affiliation:
Dcpt. Materials Science and Engineering, Cornell University, Ithaca, NY 14853
H. Y. Hwang
Affiliation:
Bell Labs, Lucent Technologies, 600 Mountain Ave., Murray Hill, NJ 07974
S-W. Cheong
Affiliation:
Bell Labs, Lucent Technologies, 600 Mountain Ave., Murray Hill, NJ 07974
R. B. Van Dover
Affiliation:
Bell Labs, Lucent Technologies, 600 Mountain Ave., Murray Hill, NJ 07974
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Abstract

We show the importance of the role of strain in doped manganite perovskite materials by revealing the dominance of stress anisotropy effects over magnetocrystalline anisotropy effects in the magnetic anisotropy of these films. In order to measure magnetic anisotropy in the plane of the films, remnant magnetization was measured as a function of in-plane angle. The (110) La0.7Sr0.3MnO3 films reveal a twofold symmetry while the (100) films have fourfold symmetry. Temperature dependence of the magnetic anisotropy of La0.7Sr0.3MnO3 films reveals decreasing anisotropy as the Curie temperature is approached.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 474: Symposium L – Epitaxial Oxide Thin Films III , 1997 , 205
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Helmolt, R. V., Wecker, J., Holzapfel, B., Schultz, L. and Samwer, K., Phys. Rev. Lett. 71 2331 (1993).Google Scholar
2. Jin, S., Tiefel, T.H., McCormack, M., Fastnacht, R.A., Ramesh, R. and Chen, L.H. Science 264 413 (1994).Google Scholar
3. Ju, H.L., Kwon, C., Li, Qi, Greene, R.L. and Venkatesan, T., Appl. Phys. Lett. 65 2108 (1994).Google Scholar
4. Liu, J.Z., Chang, I.C., Irons, S., Klavins, P., Shelton, R.N., Song, K. and Wasserman, S.R., Appl. Phys. Lett. 66 32188 (1995).Google Scholar
5. Hawley, M.E., Wu, X.D., Arendt, P.N., Adams, C.D., Hundley, M.F. and Heffner, R.H., Proc. Symp. Mater. Res. Soc. 401 531 (1995).Google Scholar
6. Hwang, H.Y., Palstra, T.T.M., Cheong, S-W. and Batlogg, B., Phys. Rev. B 52 15046 (1995).Google Scholar
7. Ibarra, M.R., Algarabel, P.A., Marquina, C., Basco, J. and Garcia, J., Phys. Rev. Lett. 75 3541 (1995).Google Scholar
8. Jin, S., Tiefel, T.M., McCormack, M., O'Bryan, H.M., Chen, L.H., Ramesh, R. and Schurig, D., Appl. Phys. Lett. 67 557 (1995).Google Scholar
9. Kwon, C., Kim, K.-C., Robson, M.C., Lofland, S.E., Bhagat, S.M., Venkatesan, T., Ramesh, R. and Gomez, R.D., submitted to J. Mag. Magn. Mater.Google Scholar
10. Lecoeur, P., Trouillard, P.L., Xiao, Gang, Gupta, A., Ging, G.Q., Li, X.W., submitted to Phys. Rev. B (Rapid Communications).Google Scholar
11. Suzuki, Y., Hwang, H.Y., Cheong, S-W., van Dover, R.B., submitted to Appl. Phys. Lett.Google Scholar
12. Bozorth, R.M., “Fcrromagnetism,” p. 582, IEEE Press, New York, NY, 1993.Google Scholar