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Electric Breakdown in Nitride PN Junctions

Published online by Cambridge University Press:  21 February 2011

V.A. Dmitriev ,
N.I. Kuznetsov ,
K.G. Irvine  and
C.H. Carter Jr.
V.A. Dmitriev
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713 USA
N.I. Kuznetsov
Affiliation:
Cree Research Eastern European Division and A.F. Ioffe Institute, 26 Polytechnicheskaya Street, St. Petersburg, 194021 Russia
K.G. Irvine
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713 USA
C.H. Carter Jr.
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Durham, NC 27713 USA
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Abstract

Electric breakdown of mesa terminated GaN and AlGaN pn diodes was investigated. The nitride pn structures were grown on 6H-SiC (0001) wafers by metalorganic chemical vapor deposition (MOCVD). Mesa structures were fabricated by reactive ion etching (RIE). Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the pn junctions were measured. It was found that the junctions were linearly graded. Microplasmic breakdown was observed. The breakdown voltage for GaN and AlGaN diodes ranged from 40 to 150 V and from 40 to 100 V, respectively. The electric breakdown field and temperature coefficient of the breakdown voltage were measured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 909
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

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