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Electric field effect in amorphous semiconductor films assembled from transition-metal-encapsulating Si clusters

Published online by Cambridge University Press:  10 August 2011

N. Uchida ,
T. Miyazaki ,
Y. Matsushita ,
K. Sameshima  and
T. Kanayama
N. Uchida
Affiliation:
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
T. Miyazaki
Affiliation:
Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Y. Matsushita
Affiliation:
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan Institute of Applied Physics and Doctoral Program in Applied Physics, University of Tsukuba, 1-1-1 Tenoudai, Tsukuba, Ibaraki 305-8573, Japan
K. Sameshima
Affiliation:
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan Institute of Applied Physics and Doctoral Program in Applied Physics, University of Tsukuba, 1-1-1 Tenoudai, Tsukuba, Ibaraki 305-8573, Japan
T. Kanayama
Affiliation:
Institute of Applied Physics and Doctoral Program in Applied Physics, University of Tsukuba, 1-1-1 Tenoudai, Tsukuba, Ibaraki 305-8573, Japan National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Abstract

We synthesized amorphous semiconductor films composed of Mo-encapsulating Si clusters (MoSin : n∼10) on solid substrates. The MoSi10 films had Si networks similar to hydrogenated amorphous Si and an optical gap of 1.5 eV. Electron spin resonance signals were not observed in the films indicating that dangling bonds of Si were terminated by Mo atoms. We fabricated thin-film-transistors using the MoSi10 film as a channel material. The electric field effect of the film was clearly observed. This suggests that the density of mid-gap states in the film is low enough for the field effect to occur.

Keywords

cluster assemblythin filmlaser ablation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a18-04
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1.For example, Morigaki, K.: Physics of Amorphous Semiconductors (Imperial College Press and World Scientific Publishing, London, 1999) pp. 99–136, 317– 366.10.1142/9789812817556_0007Google Scholar
2. Uchida, N., Kintou, H., Matsushita, Y., Tada, T. and Kanayama, T., Appl. Phys. Express 1 121502 (2008).10.1143/APEX.1.121502Google Scholar
3. Uchida, N., Miyazaki, T., Matsushita, Y., Sameshima, K and Kanayama, T., Thin Solid Films, in press.Google Scholar
4. Beck, S. M., J. Chem. Phys. 87 4233 (1987).10.1063/1.452877Google Scholar
5. Hiura, H., Miyazaki, T., and Kanayama, T., Phys. Rev. Lett. 86 1733 (2001).10.1103/PhysRevLett.86.1733Google Scholar
6. Uchida, N., Bolotov, L., Miyazaki, T. and Kanayama, T., J. Phys. D: Appl. Phys. 36 L43 2003.10.1088/0022-3727/36/9/101Google Scholar
7. Negishi, A., Kariya, N., Sugawara, K., Arai, I., Hiura, H., and Kanayama, T.: Chem. Phys. Lett. 388 463 (2004).10.1016/j.cplett.2004.03.036Google Scholar
8. Sun, Z., Oyanagi, H., Uchida, N., Miyazaki, T., and Kanayama, T.: J. Phys. D: Appl. Phys. 42 015412 (2009).10.1088/0022-3727/42/1/015412Google Scholar
9. Miyazaki, T., Uchida, N., and Kanayama, T., Phys. Stat. solidi C 7 636 (2010).Google Scholar
10. Shaw, L. and Abbaschian, R., J. Mater. Sci. 30 5272 (1995).10.1007/BF00356081Google Scholar
11. Beeman, D., Tsu, R., and Thorpe, M. F., Phys. Rev. B 32 874 (1985).10.1103/PhysRevB.32.874Google Scholar
12. Joannopoulos, J. D. and Lucovsky, G. ed.: The Physics of Hydrogenated Amorphous Silicon II (Springer-Verlag, 1984) pp. 169-190, 261-297.Google Scholar
13. Stutzmann, M., Phys. Rev. B 35 5666 (1987).10.1103/PhysRevB.35.5666Google Scholar
14. Skuja, L., J. of Non-Crystalline Solids 239 16 (1998).10.1016/S0022-3093(98)00720-0Google Scholar
15. Stutzmann, M. and Stuke, J., Philos. Mag. B 63 151 (1991).10.1080/01418639108224436Google Scholar
16. Okamoto, H. and Hamakawa, Y., J. Non-Cryst. Solids 77/78 1441 (1985).Google Scholar