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Electrical and Metallurgical Characteristics of PtSix and TiSix/GaAs Schottky Contacts

Published online by Cambridge University Press:  25 February 2011

Qian He  and
Luo Jinsheng
Qian He
Affiliation:
Xi’an Jiaotong University, Microelectronics Technology Division, Xi’an, China
Luo Jinsheng
Affiliation:
Xi’an Jiaotong University, Microelectronics Technology Division, Xi’an, China
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Abstract

Electrical properties, metallurgical properties and their relationship of PtSix/GaAs formed by sputter deposition and TiSix/GaAs formed by e-gun multilayer evaporation have been studied. It has been found that TiSix/GaAs contacts exhibit excellent Schottky electrical propcrties and good metallurgical stability after RTA (975°C , 12 sec) but some interface unstability and degradation of electrical properties after conventional FA (800°C ,20 min). The electrical and metallurgical properties of PtSix/GaAs contacts begin to degrate after annealed at 500°C.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 469
Copyright
Copyright © Materials Research Society 1990

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References

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