Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-01-15T01:10:20.568Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical and Microwave Properties of Mn Implanted (Ba,Sr)TiO3 Thin Films

Published online by Cambridge University Press:  10 February 2011

J. D. Baniecki ,
R. B. Laibowitz ,
T. M. Shaw ,
P. R. Duncombe ,
D. A. Neumayer ,
M. Cope ,
D.E Kotecki ,
H. Shen  and
Q. Y. Ma
J. D. Baniecki
Affiliation:
Dept. of Electrical Engineering, Columbia University, NY, NY 10027 IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
R. B. Laibowitz
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
T. M. Shaw
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
P. R. Duncombe
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
D. A. Neumayer
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
M. Cope
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
D.E Kotecki
Affiliation:
IBM Micorelectronics Division, Hopewell Jet., NY 12533
H. Shen
Affiliation:
Siemens Microelectronics Inc., Hopewell Jet., NY 12533
Q. Y. Ma
Affiliation:
Dept. of Electrical Engineering, Columbia University, NY, NY 10027
Get access

Abstract

We have used ion implantation to dope polycrystalline BaxSr(1−x)TiO3 (BST) thin films with Mn. Dopant concentrations were varied in the range of 0.1 at % to 2 at % Mn. X-ray diffraction and TEM studies show that the implantation process significantly damages the film leaving only short range order, but subsequent rapid thermal annealing heals the damage. The effect of the different Mn dopant concentrations on the electrical properties of the complex capacitance, relaxation currents, leakage, C-V, and resistance degradation was investigated. Our initial results show that the implanted films have significantly lower leakage (up to a factor of 10 lower) than the as deposited films for small (<0.5 at % Mn) implantation doses. The capacitance decreased with increasing Mn concentration while the relaxation currents and loss tangents increased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 27
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Kotccki, D.E., Integrated Ferroelectrics, Vol. 16, 1 (1997)Google Scholar
[2] De Flaviis, F., Alexopoulos, N.G., Stafsudd, O.M., IEEE Trans. Microwave Theory Tech. Vol. 45, No. 6, 963 (1997)Google Scholar
[3] Babbitt, , Koscica, T., Drach, W., Didomenico, L., Integrated Ferroelectrics, Vol. 8, No.1–2, 65 (1995)Google Scholar
[4] Hofman, W., Hoffmann, S., Waser, R., Thin Solid Films, 305, 66–73 (1997)Google Scholar
[5] Buskirk, Van, Bilodeau, S.M., Roeder, J.F., Kirlin, P.S., Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes (Japan) Vol. 35, No. 4B, 2520 1996 Google Scholar
[6] Neumayer, , Duncombe, P.R., Laibowitz, R., and Grill, A., ISIF Conference proceedings, March, 1997, Santa Fe, New Mexico Google Scholar
[7] Baniecki, J.D., Eaibowitz, R.B., Shaw, T.M., Duncombe, P.R., Neumayer, D.A., Kotecki, D.E., Shen, H., Ma, Q.Y., Appl. Phys. Lett., Jan. 26, 1998 Google Scholar
[8] Schumacher, M., Dietz, G.W., Waser, R. Integrated Ferroelectrics, Vol. 10, 231 (1995)Google Scholar
[9] Baniecki, J.D., Laibowitz, R.B. and Shaw, T.M., Unpublished resultsGoogle Scholar
[10] Jonscher, A.K., “Dielectric Relaxation in Solids”, (Chelsea Dielectrics Press, London, 1983).Google Scholar
[11] Basceri, C., Streiffer, S.K., Kingon, A.I., Waser, R., J. Appl. Phys. 82(5), 1 Sept. (1997)Google Scholar