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Electrical and Optical Properties of Si and Si1−xGex, Alloy Grown by the Ultra-High Vacuum Vapour Phase Epitaxy Method

Published online by Cambridge University Press:  22 February 2011

W. Y. Leong ,
D. J. Robbing ,
J. L. Glasper ,
L. T. Canham ,
R. Carline  and
P. Calcott
W. Y. Leong
Affiliation:
Defence Research Agency, Electronics Division (RSRE), St. Andrews Road, Great Malvern, Worcs WR14 3PS, U.K.
D. J. Robbing
Affiliation:
Defence Research Agency, Electronics Division (RSRE), St. Andrews Road, Great Malvern, Worcs WR14 3PS, U.K.
J. L. Glasper
Affiliation:
Defence Research Agency, Electronics Division (RSRE), St. Andrews Road, Great Malvern, Worcs WR14 3PS, U.K.
L. T. Canham
Affiliation:
Defence Research Agency, Electronics Division (RSRE), St. Andrews Road, Great Malvern, Worcs WR14 3PS, U.K.
R. Carline
Affiliation:
Defence Research Agency, Electronics Division (RSRE), St. Andrews Road, Great Malvern, Worcs WR14 3PS, U.K.
P. Calcott
Affiliation:
Defence Research Agency, Electronics Division (RSRE), St. Andrews Road, Great Malvern, Worcs WR14 3PS, U.K.
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Abstract

Epitaxial growth and p-type doping in Si and Si1−xGex alloy by the ultra-high vacuum vapour phase epitaxy (UHV-VPE) method using SiH4/GeH4/B2H/H2 mixture is reported. Growth temperatures as low as 610°C were studied for Ge contents between x=0 to 0.25. Secondary Ion Mass Spectroscopy (SIMS) data of boron dopant profiles in si and Si1−xGex structures are presented. Strong luminescence attributed to the strained Si1−xGex alloy is obtained. The bandgap in the alloy layer obtained from our luminescence data is compared with published data. Unambiguous electroluminescence from a Si1−xGex multiple quantum well p-n structure grown by UHV-VPE, supported by the photoluminescence and photoconductivity measurement, is reported for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 613
Copyright
Copyright © Materials Research Society 1991

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References

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