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Electrical Characteristics of BaxSr1-xTiO3(BST) Capacitors Implemented with Ti-Al Electrodes

Published online by Cambridge University Press:  01 February 2011

Thottam S Kalkur ,
Jeff Whitescarver  and
Nick Cramer
Thottam S Kalkur
Affiliation:
kalkur@eas.uccs.edu, University of Colorado at Colorado Springs, Department of Electrical and Computer Engineering, 1420, Austin Bluff Parkway, Colorado Springs, 80933-7150, United States
Jeff Whitescarver
Affiliation:
jwhiesc@hotmail.com, University of Colorado at Colorado Springs, Colorado Springs, 80933-7150, United States
Nick Cramer
Affiliation:
ncramer@adelphia.net, University of Colorado at Colorado Springs, Colorado Springs, 80933-7150, United States
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Abstract

Ti-Al was used as the electrode for RF magnetron sputtered BST film at a substrate temperature of 450°C for decoupling capacitor applications. X-ray diffraction analysis shows that the deposited film BST film is amorphous. Electrical characterizations of the devices performed by capacitance versus voltage measurements show a dielectric constant of about 55. With increase in annealing temperature above 450°C, the capacitance was found to decrease significantly.

Keywords

annealingferroelectricPt
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 928: Symposium GG – Current and Future Trends of Functional Oxide Films , 2006 , 0928-GG14-10
Copyright
Copyright © Materials Research Society 2006

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