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Electrical Characteristics of Crystalline Gd2O3 Film on Si (111): Impacts of Growth Temperature and Post Deposition Annealing

Published online by Cambridge University Press:  01 February 2011

Gang Niu ,
Bertrand Vilquin ,
Nicolas Baboux ,
Guillaume Saint-Girons ,
Carole Plossu  and
Guy Hollinger
Gang Niu
Affiliation:
gang.niu@ec-lyon.fr, Institute of Nanotechnologies of Lyon, Ecully, France
Bertrand Vilquin
Affiliation:
bertrand.vilquin@ec-lyon.fr, Institute of Nanotechnologies of Lyon, Ecully, France
Nicolas Baboux
Affiliation:
nicolas.baboux@insa-lyon.fr, Institute of Nanotechnologies of Lyon, Lyon, France
Guillaume Saint-Girons
Affiliation:
Guillaume.Saint-Girons@ec-lyon.fr, Institute of Nanotechnologies of Lyon, Ecully, France
Carole Plossu
Affiliation:
carole.plossu@insa-lyon.fr, Institute of Nanotechnologies of Lyon, Lyon, France
Guy Hollinger
Affiliation:
guy.hollinger@ec-lyon.fr, Institute of Nanotechnologies of Lyon, Ecully, France
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Abstract

This work reports on the epitaxial growth of crystalline high-k Gd2O3 on Si (111) by Molecular Beam Epitaxy (MBE) for CMOS gate application. Epitaxial Gd2O3 films of different thicknesses have been deposited on Si (111) between 650°C~750°C. Electrical characterizations reveal that the sample grown at the optimal temperature (700°C) presents an equivalent oxide thickness (EOT) of 0.73nm with a leakage current density of 3.6×10-2 A/cm2 at |Vg-VFB|=1V. Different Post deposition Annealing (PDA) treatments have been performed for the samples grown under optimal condition. The Gd2O3 films exhibit good stability and the PDA process can effectively reduce the defect density in the oxide layer, which results in higher performances of the Gd2O3/Si (111) capacitor.

Keywords

dielectric propertiesGdmolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1252: Symposia I/J – Materials and Devices for End-of-Roadmap and Beyond CMO's Scaling , 2010 , 1252-I05-09
Copyright
Copyright © Materials Research Society 2010

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