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Electrical Characterization of Crystallized—Silicon Thin Films

Published online by Cambridge University Press:  28 February 2011

N. M. Johnson
N. M. Johnson*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

A review is presented on the application of electrical measurements to evaluate the existence and effects of residual electronic defects in crystallized—silicon thin films. Experimental techniques include current—voltage characterization, electronbeam—induced conductivity, transient—capacitance measurements on thin—film capacitors, transient—conductance spectroscopy on thin—film transistors, and photoconductivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 337
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1.Goodman, A. M., IEEE Trans. Electron Devices ED–24, 215 (1977).Google Scholar
2.Ham, W. E., Abrahams, M. F., Buiocchi, C. J., and Blanc, J., J. Electrochem. Soc. 124, 634 (1978).Google Scholar
3.Vasudev, P. K., Solid State Technol. 26, 124 (February 1983).Google Scholar
4.Vasudev, P. K., Solid State Technoi. 266, 118 (June 1983).Google Scholar
5, Tsaur, B-Y, Geis, M. W., Fan, J. C. C., Silversmith, D. J., and Mountain, R. W., Mat. Res. Soc, Symp, Proc. 4, 585 (1982),Google Scholar
6.Johnson, N. M., Biegelsen, D. K., Tuan, H. C., Moyer, M. D., and Fennell, L. E., IEEE Electron Device Left. EDL–3, 369 (1982).Google Scholar
7.Lyon, S. A., Nemanich, R. J., Johnson, N. M., and Biegelsen, D. K., Appl. Phys, Lett. 40, 316 (1982),Google Scholar
8.Tsaur, B - Y, Fan, J. C. C, and Geis, M. W., Appl. Phys. Lett. 40, 322 (1982)Google Scholar
9.Johnson, N. M, Tuan, H. C., Moyer, M. D., Thompson, M. J, Biegelsen, D. K., Fennell, L.E., and Chiang, A., Mat. Res. Soc. Proc. 13, 605 (1983).Google Scholar
10.Smith, C. S., Phys, Rev, 94, 42 (1954),Google Scholar
11.Schlotterer, H., Solid State Electron. 11, 947 (1968).Google Scholar
12.Johnson, N. M., Biegelsen, D. K., and Moyer, M. D., Appl. Phys. Lett. 38, 900 (1981).Google Scholar
13.Baumgart, H., Leamy, H.J., Trimble, L.E., Doherty, C. J., and Celler, G. K., Mat, Res. Soc. Symp. Proc. 5, 311 (1982).Google Scholar
14.Lam, H. W., Pinizzotto, R. F., Malhi, S. D. S., and Vaandrager, B. L., Appl. Phys. Lett. 41, 1083 (1982).Google Scholar
15.Maby, E. W., Atwater, H.A., Keigler, A. L., and Johnson, N. M., Appl. Phys. Lett. 43, 482 (1983).Google Scholar
16.Fennell, L. E., Moyer, M. D., Biegelsen, D. K., Chiang, A., and Johnson, N. M., Mat. Res. Soc. Symp. Proc. 23, 403 (1984).Google Scholar
17.Smith, H. I., Thompson, C. V., Geis, M. W., Atwater, H. A., Yonehara, T., and Wong, C. C., Mat. Res. Soc. Symp. Proc. 23, 459 (1984).Google Scholar
18.Geis, M. W., Chen, C. K., Smith, H. I., Mountain, R. W., and Doherty, C. L., Mat. Res. Soc. Symp. Proc. 35, 575 (1985).Google Scholar
19.Kamins, T. I. and Herzen, B. P. Von, IEEE Trans. Electron Device Lett. EDL–2, 313 (1981).Google Scholar
20.Ng, K. K., Celler, G. K., Povilonis, E. I., Frye, R. C., Leamy, H. J., and Sze, S. M., IEEE Trans. Electron Device Lett. EDL–2, 316 (1981),Google Scholar
21, Kamins, T. I., Solid State Electron. 17, 675 (1974).Google Scholar
22.Tsaur, B-Y., Fan, J. C. C., and Geis, M. W., Appl. Phys. Lett. 41, 83 (1982).Google Scholar
23.K, P., Vasudev, Microelectron. J. 14, 45 (1984).Google Scholar
24, Chantre, A., Ronzani, D., and Vu, D. P., this proceedings,Google Scholar
25.Johnson, N. M., in Semiconductors and Semimetals, Vol. 17(Academic Press, New York, 1985), ed., Gibbons, J.F., chap. 4.Google Scholar
26.Johnson, N. M., Mat. Res. Soc. Symp. Proc. 35, 265 (1985),Google Scholar
27.Wiley, J. D. and Miller, G. L., IEEE Trans. Electron Devices ED–22, 265 (1975).Google Scholar
28.Johnson, N.M., Moyer, M. D., and Fennell, L. E., Appl. Phys, Lett. 41, 560 (1982).Google Scholar
29.Johnson, N. M., Moyer, M. D., Fennell, L. E., Maby, E. W., and Atwater, H., Mat. Res. Soc. Symp. Proc. 13, 491 (1983).Google Scholar
30.Johnson, N.M. and Moyer, M. D., Mat. Res. Soc, Symp. Proc. 33, 101 (1984).Google Scholar
31.Kamins, T. I., Lee, K. F., and F, J., Gibbons, IEEE Trans. Electron Device Left. EDL–1, 5 (1980).Google Scholar
32.Seager, C. H, Pike, G. E., and Ginley, D. S., Phys. Rev. Left. 43, 532 (1979).Google Scholar
33.Johnson, N. M., J. Vac. Sci. Technol. 21, 303 (1982).Google Scholar
34.Sturm, J. C., Plummer, J. D., and Gibbons, J. F., Appl. Phys. Lett. 46, 1171 (1985).Google Scholar
35.Collet, M. G., Solid-State Electron. 18, 1077 (1975).Google Scholar
36.Golio, J. M., Trew, R. J., Maracas, G. N., and Lefevre, H., Solid State Electron, 27, 367 (1984).Google Scholar
37.Chen, J.-W., Ko, R. J., Brzesinsli, D. W., Forbes, L., and Dell'Oca, C. J., IEEE Trans. Electron Devices ED–28, 299 (1981).Google Scholar
38.Hendrickson, T. E., IEEE Trans. Electron Devices ED–25, 435 (1978).Google Scholar
39.Vu, D. P., Chantre, A., Ronzani, D., and Pfister, J. C., this proceedings.Google Scholar
40.Johnson, N. M. and Chiang, A., Appl. Phys. Lett. 45, 1102 (1984).Google Scholar
41.Chiang, A. and Johnson, N. M., IEEE Trans, Electron Devices ED–32, 1559 (1985).Google Scholar
42.Grove, A. S., Physics and Technology of Semiconductor Devices (Wiley, New York, 1967), chap. 6.Google Scholar
43.Chiang, A., M. 1H. Zarzycki, and M, N., Johnson, this proceedings.Google Scholar