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Electrical Characterization of Hg1−xCdxTe Alloys*

Published online by Cambridge University Press:  15 February 2011

S. L. Lehoczky ,
C. J. Summers ,
F. R. Szofran  and
B. G. Martin
S. L. Lehoczky
Affiliation:
McDonnell Douglas Research Laboratories, McDonnell Douglas Corporation St. Louis, Missouri 63166 USA
C. J. Summers
Affiliation:
McDonnell Douglas Research Laboratories, McDonnell Douglas Corporation St. Louis, Missouri 63166 USA
F. R. Szofran
Affiliation:
McDonnell Douglas Research Laboratories, McDonnell Douglas Corporation St. Louis, Missouri 63166 USA
B. G. Martin
Affiliation:
McDonnell Douglas Research Laboratories, McDonnell Douglas Corporation St. Louis, Missouri 63166 USA
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Abstract

Theoretical models are described for calculations of charge-carrier concentrations, Fermi energy, and conduction-electron mobility as functions of x, temperature, and ionized- and neutral-defect concentrations in Hg1−xCdxTe alloys. Measurements are reported of electron concentration and electron mobility from 5–300 K for alloys with 0.17 < ˗ < 0.30. The electrical data are in reasonable agreement with theory and were analyzed to obtain estimates of donor and acceptor state concentrations. The electron inobilities are calculated in terms of a microscopic theory of electrical conduction derived from the solution of the Boltzmann equation for the perturbed steady-state electron distribution function and show that longitudinal opticalphonon and charged and neutral defect scattering are the dominant mobility-limiting mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 9 , 1981 , 421
Copyright
Copyright © Materials Research Society 1982

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Footnotes

+

Present address: Aerojet Electro-Systems Company, Azusa, CA 91702.

*

This work was supported in part by NASA contract NAS8-33107, in part by AFOSR contract F49620-78-C-0072, and in part by the McDonnell Douglas Independent Research and Development program.

References

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