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Electrical Characterization of Thick InGaN Films for Photovoltaic Applications

Published online by Cambridge University Press:  17 February 2014

Yoshitaka Nakano ,
Liwen Sang  and
Masatomo Sumiya
Yoshitaka Nakano
Affiliation:
Chubu University, 1200 Matsumoto, Kasugai, Aichi 487-8501, Japan
Liwen Sang
Affiliation:
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Masatomo Sumiya
Affiliation:
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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Abstract

We have electrically characterized a 300 nm-thick unintentionally-doped In0.09Ga0.91N film grown by metal-organic chemical vapor deposition on a GaN template, employing capacitance-voltage (C-V), thermal admittance spectroscopy (TAS), and steady-state photocapacitance spectroscopy (SSPC) techniques on Schottky barrier diodes. TAS measurements revealed a degenerating-like shallow-donor defect with a thermal activation energy of ∼7 meV, which most likely acts as a source of residual carriers with their concentration of ∼1017 cm-3 determined from C-V measurements. Additionally, SSPC measurements revealed two characteristic deep-level defects located at ∼2.07 and ∼3.05 eV below the conduction band, which were densely enhanced near the underlayer. These electronic defects are probably introduced by alloying InN with GaN.

Keywords

nitrideelectrical propertiesenergetic material
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 29 - 34
Copyright
Copyright © Materials Research Society 2014 

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References

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