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Electrical Conductivity of Silicides

Published online by Cambridge University Press:  03 September 2012

G. Ottaviani  and
F. Nava
G. Ottaviani
Affiliation:
University of Modena, Physics Department, Modena, Italy
F. Nava
Affiliation:
University of Modena, Physics Department, Modena, Italy
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Abstract

Electrical transport properties of thin film and single crystal silicides will be reviewed and discussed. The presentation will be made by considering that most of the compounds behave as metals, with the resistivity which increases with the temperature, and few of them are semiconductors. Semiconductor silicides have band-gaps which span between 0.1 and 1.2 eV for ReSi2 and IrSil.75, respectively. Several metallic silicides show, expecially in the high-temperature limit, a resistivity-temperature dependence different from the classical linearity. The deviation, related to the intrinsic properties of the compound, can be affected by the presence of structural defects and impurities. The role played of such defects on the residual resistivity at low temperature will also be considered. Anisotropic effects will be discussed in relation with the shape of the Fermi surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 473
Copyright
Copyright © Materials Research Society 1994

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References

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