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Electrical Properties, Deep Levels Spectra and Luminescence of Undoped GaN/InGaN Multi-quantum-well Structures as Affected by Electron Irradiation

Published online by Cambridge University Press:  01 February 2011

Alexander Y Polyakov ,
Nikolai B Smirnov ,
Anatoliy V Govorkov ,
Alexander V Markov ,
Cheul-Ro Lee ,
In-Hwan Lee ,
Nikolai G Kolin ,
Denis I Merkurisov ,
Vladimir M Boiko  and
James S Wright
Alexander Y Polyakov
Affiliation:
polyakov@girmet.ru, Institute of Rare Metals, Physics, B. Tolmachevsky, 5, Moscow, 119270, Russian Federation, 7495-239-90-90
Nikolai B Smirnov
Affiliation:
Institute of Rare Metals, Physics, B. Tolmachevsky, 5, Moscow, 119270, Russian Federation
Anatoliy V Govorkov
Affiliation:
Institute of Rare Metals, Physics, B. Tolmachevsky, 5, Moscow, 119270, Russian Federation
Alexander V Markov
Affiliation:
avmark@girmet.ru, Institute of Rare Metals, Physics, B. Tolmachevsky, 5, Moscow, 119270, Russian Federation
Cheul-Ro Lee
Affiliation:
Chonbuk National University, School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Eng, Chonju 561-756, Chonju, 561-756, Korea, Republic of
In-Hwan Lee
Affiliation:
Chonbuk National University, School of Advanced Materials Engineering and Research Center for Advanced Materials Development , Eng, Chonju 561-756, Chonju, 561-756, Korea, Republic of
Nikolai G Kolin
Affiliation:
Obninsk Branch of Federal State Enterprise, Karpov Institute of Physical Chemistry, Kiev Avenue, Obninsk, Kaluga Region, 249033, Russian Federation
Denis I Merkurisov
Affiliation:
Obninsk Branch of Federal State Enterprise, Karpov Institute of Physical Chemistry, Kiev Avenue, Obninsk, Kaluga Region, 249033, Russian Federation
Vladimir M Boiko
Affiliation:
Obninsk Branch of Federal State Enterprise, Karpov Institute of Physical Chemistry, Kiev Avenue, Obnin sk, Kaluga Region, 249033, Russian Federation
James S Wright
Affiliation:
University of Florida, Materials Science and Engineering, Gainesville, FL, 32611, United States
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Abstract

Effects of 10 MeV electron and fast reactor neutron irradiations on carrier removal rate and deep traps spectra were compared for undoped n-GaN samples. It is shown that for electron irradiation the carrier removal rate is well accounted for by the difference in introduction rates of nitrogen-vacancy-related donors with activation energy 0.2 eV and of nitrogen-interstitial-related acceptors at Ec-1.2 eV. In the case of neutron irradiation the introduction rate of all deep traps was much lower than the carrier removal rate indicating that the main contribution to electron removal was due to disordered regions. These regions give rise to a marked persistent photocapacitance signal and a hole-trap-like feature in deep traps spectra. The Fermi level position in the core of disordered regions is located near Ec-(0.85-1) eV.

Keywords

electrical propertieselectron irradiationnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-11
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Takeuchi, C. et al., Appl. Phys. Lett. 73, 1691 (1998)Google Scholar