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Electrical Properties of Metal-Oxide-Silicon Structures Wrm Sol-Gel Oxides

Published online by Cambridge University Press:  25 February 2011

W. L. Warren ,
P. M. Lenahan  and
C. J. Brinker
W. L. Warren
Affiliation:
Departnent of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA 16802
P. M. Lenahan
Affiliation:
Departnent of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA 16802
C. J. Brinker
Affiliation:
Sandia National Laboratório, Albuquerque, NM 87185
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Abstract

We have investigated the electronic properties of sol-gel derived films on silicon substrates. Our investigation involves SiO2, aluminosilicate and borosili cate oxides on silicon. Seme sol-gel oxides are excellait insulators; seme sol-gel films on silicon also exhibit quite low oxide/silicon interface trap densities. We have also subjected sol-gel films on silicon to 4 Mrad(SiO2) of radiation and have found that these structures appear to be radiation hard (very little radiation induced oxide space charge or interface trap generation). Our results strongly suggest that sol-gel processing could provide insulating films for a variety of microelectronic device applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 121: Symposium H – Better Ceramics Through Chemistry III , 1988 , 803
Copyright
Copyright © Materials Research Society 1988

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References

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