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Electrical Properties of Photoconductor Using Ga2O3/CuGaSe2 Heterojunction

Published online by Cambridge University Press:  28 August 2013

Kenji Kikuchi ,
Shigeyuki Imura ,
Kazunori Miyakawa ,
Misao Kubota  and
Eiji Ohta
Kenji Kikuchi
Affiliation:
NHK Science and Technology Research Laboratories, 1-10-11, Kinuta, Setagaya-ku, Tokyo, 157–8510, Japan Graduate School of Science and Technology, Keio University, 3-14-1, Hiyoshi, Kouhoku-ku, Yokohama, 223–8522, Japan
Shigeyuki Imura
Affiliation:
NHK Science and Technology Research Laboratories, 1-10-11, Kinuta, Setagaya-ku, Tokyo, 157–8510, Japan
Kazunori Miyakawa
Affiliation:
NHK Science and Technology Research Laboratories, 1-10-11, Kinuta, Setagaya-ku, Tokyo, 157–8510, Japan
Misao Kubota
Affiliation:
NHK Science and Technology Research Laboratories, 1-10-11, Kinuta, Setagaya-ku, Tokyo, 157–8510, Japan
Eiji Ohta
Affiliation:
Graduate School of Science and Technology, Keio University, 3-14-1, Hiyoshi, Kouhoku-ku, Yokohama, 223–8522, Japan
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Abstract

The feasibility of using a photoconductor with a Ga2O3/CuGaSe2 heterojunction for visible light sensors was investigated. CIGS chalcopyrite semiconductors have both a high absorption coefficient and high quantum efficiency. However, their dark current is too high for image sensors. In this study, we applied gallium oxide (Ga2O3) as a hole-blocking layer for CIGS thin film to reduce the dark current. Experimental results showed that the dark current was drastically reduced, and an avalanche multiplication phenomenon was observed at an applied voltage of over 6 V. However, this structure had sensitivity only in the ultraviolet light region because its depletion region was almost completely spread in the Ga2O3 layer since the carrier density of the Ga2O3 layer was much lower than that of the CIGS layer. These results indicate that the Ga2O3/CuGaSe2 heterojunction has potential for use in visible light sensors but that we also need to increase the carrier density of the Ga2O3 layer to shift the depletion region to the CIGS film.

Keywords

sensorphotoconductivityphotovoltaic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1538: Symposium C – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls , 2013 , pp. 391 - 395
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Tell, B., Shay, J.L. and Kasper, H.M., Phys. Rev. B4 2463 (1971).CrossRefGoogle Scholar
Ramanathanm, K., Contreras, M.A., Perkins, C.L., Asher, S., Hasoon, F.S., Keane, J., Young, D., Romero, M., Metzger, W., Noufi, R., Ward, J. and Duda, A., Prog. Photovolt :Res. Appl. 11, 225 (2003).CrossRefGoogle Scholar
Nakada, T., Furumi, K. and Kunioka, A., IEEE Transactions of Electron Devices 46(10), 2093 (1999).CrossRefGoogle Scholar
Tanaka, K., Kosugi, M., Ando, F., Ushiki, T., Usui, H. and Sato, K., Jpn. J. Appl. Phys. Suppl. 32, 113 (1993).CrossRefGoogle Scholar
Kikuchi, K., Ohkawa, Y., Miyakawa, K., Matsubara, T., Tanioka, K., Kubota, M. and Egami, N., phys. stat. sol.(c) 8(9), 2800 (2011).Google Scholar
Ueda, N., Hosono, H., Waseda, R. and Kawazoe, H., Appl. Phys. Lett. 70(26), 3561 (1997).CrossRefGoogle Scholar
Hanna, G., Jasenek, A., Rau, U. and Schock, H.W., Thin Solid Films, 387, 71 (2001).CrossRefGoogle Scholar
Herberholz, R., Nadenau, V., Ruhle, U., Koble, C., W.Schock, H. and Dimmler, B., Solar Energy Materials and Solar Cells 49, 227 (1997).CrossRefGoogle Scholar
Orita, M., Ohta, H., Hirano, M. and Hosono, H., Appl. Phys. Lett. 77(25), 4166 (2000).CrossRefGoogle Scholar
Sugiyama, M., Nakanishi, H., Chichibu, S.F., Jpn. J. Appl. Phys. 40, L428 (2001).CrossRefGoogle Scholar
Minemoto, T., Matusi, T., Takakura, H., Hamakawa, Y., Negami, T., Hashimoto, Y., Uenoyama, T., Kitagawa, M., Solar Energy Materials & Solar Cells 67, 83 (2001).CrossRefGoogle Scholar
Tanioka, K., Yamazaki, J., Shidara, K., Taketoshi, K., Kawamura, T., Ishioka, S. and Takasaki, Y., IEEE Electron Device Lett. 8, 392 (1987).CrossRefGoogle Scholar
Orita, M., Hiramatsu, H., Ohta, H., Hirano, M. and Hosono, H., Thin Solid Films 411, 134 (2002).CrossRefGoogle Scholar
Zhang, Yijun, Yan, Jinliang, Zhao, Gang and Xie, Wanfeng, Physica B, 405, 3899 (2010)CrossRefGoogle Scholar