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Electrical Property of Vertically Grown Carbon Nanotube and its Application to the Nanofunctional Devices

Published online by Cambridge University Press:  21 March 2011

Jaeuk Chu ,
Kwangseok Jeong ,
Eunju Bae ,
Inkyeong Yoo ,
Wonbong Choi  and
Jujin Kim
Jaeuk Chu
Affiliation:
The National Program for Tera-Level Nanodevices, Samsung Advanced Institute of Technology, Suwon, Korea
Kwangseok Jeong
Affiliation:
The National Program for Tera-Level Nanodevices, Samsung Advanced Institute of Technology, Suwon, Korea
Eunju Bae
Affiliation:
The National Program for Tera-Level Nanodevices, Samsung Advanced Institute of Technology, Suwon, Korea
Inkyeong Yoo
Affiliation:
Materials and Devices Lab, Samsung Advanced Institute of Technology, Suwon, Korea
Wonbong Choi
Affiliation:
Materials and Devices Lab, Samsung Advanced Institute of Technology, Suwon, Korea
Jujin Kim*
Affiliation:
Department of Physics, Chonbuk National University, Chonju 561–756, Korea
*
wbchoi@sait.samsung.co.kr, jkchu@sait.Samsungco.kr 82-31-280-9351
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Abstract

A highly ordered porous alumina array which hole size is decreased down to 20nm was fabricated by a two step anodization method. Carbon Nanotube was grown vertically with thermal CVD at 600∼700 °C. By using rapid thermal annealing method, low-ohmic contact was formed between multi wall nanotubes and metal electrode and its resistance shows tens to hundreds Ω. The alumina layer which is existed between nanotube and electrode acts as a barrier for conductance. The resistance of carbon nanotube shows the temperature(T-1) dependence at 4.21K < T < 19.9K and semiconducting behavior at this temperature region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 675: Symposium W – Nanotubes, Fullerenes, Nanostructured and Disordered Carbon , 2001 , W9.3.1
Copyright
Copyright © Materials Research Society 2001

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References

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