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Electrical Single Spin Manipulation in Gated Quantum Dots via Closed Loop Trajectories

Published online by Cambridge University Press:  31 January 2011

Michael Fearn  and
John H Jefferson
Michael Fearn
Affiliation:
mfearn@qinetiq.com, QinetiQ, Malvern, United Kingdom
John H Jefferson
Affiliation:
jhjefferson@qinetiq.com, QinetiQ, Malvern, United Kingdom
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Abstract

Rotations of a single spin-qubit are demonstrated using only electrical gates. The results of simulations are presented for a typical gated quantum-well structure based on the strong spin-orbit semiconductor InSb, showing typical length and time scales for Hadamard and NOT operations. Approximate analytic expressions are derived for the spin transformations that give excellent agreement with the numerical results and demonstrate the generality of the method.

Keywords

spintronicIII-Velectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1183: Symposium FF – Novel Materials and Devices for Spintronics , 2009 , 1183-FF05-02
Copyright
Copyright © Materials Research Society 2009

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