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Electrical Transport in Carbon Nanotube Y-junctions- a Paradigm for Novel Functionality at the Nanoscale

Published online by Cambridge University Press:  01 February 2011

Jeongwon Park
Affiliation:
jepark@ucsd.eduUC, San DiegoMaterials Science programLa Jolla CA 92093-0411United States
Chiara Daraio
Affiliation:
cdaraio@ucsd.edu, UC, San Diego, Materials Science program, La Jolla, CA, 92093-0411, United States
Apparao Rao
Affiliation:
arao@clemson.edu, Clemson University, Clemson, SC, 29634-0978, United States
Prabhakar Bandaru
Affiliation:
pbandaru@ucsd.edu, UC, San Diego, Materials Science program, La Jolla, CA, 92093-0411, United States
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Abstract

Carbon Nanotube (CNT) morphologies with a self-contained gate, such as Y-junctions, offer a new way of exploiting features unique to the nanoscale, such as quantum ballistic transport. The advantages of low power and high frequency operation can then be applied to the fabrication of novel devices. Several other novel functionalities in Y- CNTs, including rectification, switching, high-frequency performance, and logic gates have been experimentally verified1. Y-CNT geometry dependent current blocking behavior, as a function of annealing temperature has also been observed. In view of the above observations, we propose that Y-CNTs can be used as prototypical nanoelectronic components.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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