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Electrical Transport in Ultrathin Films of CoSi2 on Si(111)

Published online by Cambridge University Press:  28 February 2011

J. C. Hensel ,
J. M. Phillips ,
J. L. Batstone ,
W. M. Augustyniak  and
F. C. Unterwald
J. C. Hensel
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. M. Augustyniak
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. C. Unterwald
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

We have performed electrical transport measurements on ultrathin films of epitaxial CoSi2 on Si(111) with film thickness ranging down to ∼10A. The resistivities exhibit temperature dependences characteristic of a metal and a thickness dependence which rises steeply with decreasing thickness suggestive of a quantum size effect. At the lowest temperatures (≲ 10K) the resistivities of the thinner films increase logarithmically with inverse temperature characteristic of transport in the weak localization regime as has been confirmed by magnetoresistance measurements. Hall effect measurements establish that carrier densities (holes) in the ultrathin films are essentially identical to those in bulk CoSi2, i.e. 26 × 1022 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 427
Copyright
Copyright © Materials Research Society 1987

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References

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