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Electroless Cu Deposition on Self-assembled Monolayer Alternative Barriers

Published online by Cambridge University Press:  31 January 2011

Silvia Armini  and
Arantxa Maestre Caro
Silvia Armini
Affiliation:
armini@imec.be, IMEC, Leuven, Belgium
Arantxa Maestre Caro
Affiliation:
caro@imec.be, IMEC, Leuven, Belgium
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Abstract

An alternative bottom-up Cu electro-less deposition (ELD) method without other catalyst material activation tested on blanket wafers, is the focus of this paper. The process consists in reducing the Cu ions via standard reducing agents, such as dimethylamine borane (DMAB). A wide range of experimental conditions such as pH, temperature, Cu ion concentration and time are investigated and the Cu layer nucleation and growth mechanism is evaluated on clean SiO2 and after functionalization with 3-aminopropyltrimethoxysilane (APTS) self-assembled monolayer (SAM) used as copper diffusion barrier. The barrier properties of the APTS layer after Cu ELD are also assessed by copper resistivity measurements and visual inspections as a function of the annealing temperature.

Keywords

Cuelectrodepositionself-assembly
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1156: Symposium D – Materials, Processes and Reliability for Advanced Interconnects for Micro-and Nanoelectronics–2009 , 2009 , 1156-D04-08
Copyright
Copyright © Materials Research Society 2009

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